n-gram statistical language model has been successfully applied to capture programming
patterns to support code completion and suggestion. However, the approaches using n …

With the increasing proliferation of hardware accelerators and the predicted continued
increase in the heterogeneity of future computing systems, it is necessary to understand the …

Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-
transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and …

The experimental demonstration of current-driven spin-transfer torque (STT) for switching
magnets and push domain walls (DWs) in magnetic nanowires have opened up new …

In this paper, we propose a Side Channel Attack (SCA) model on Spin-Torque Transfer RAM
(STTRAM) where an adversary can monitor the supply current of the memory array …

Magnetic tunnel junction (MTJ/CMOS-based Logic-in-Memory (LiM) circuits have nearly
zero leakage power dissipation, and they are very appropriate to design low-power …

Emerging technologies such as Spin-transfer torque magnetic random-access memory (STT-
MRAM) are considered potential candidates for implementing low-power, high density …

Non-volatile memories (NVMs) such as Spin-Transfer Torque RAM (STTRAM) have drawn
significant attention due to complete elimination of bitcell leakage. In addition to the plethora …

Data security is the most critical field in Cloud Computing. The Critical data can leak through
unpredictable side channels, posing very risky threats to information security. The Cache …

Spin-transfer torque magnetic random access memory (STT-MRAM) is a promising
nonvolatile memory technology for various applications from low power to high-density …