The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review
Silicon carbide (SiC) is one of the most promising materials for applications in harsh
environments thanks to its excellent electrical, mechanical, and chemical properties. The …
environments thanks to its excellent electrical, mechanical, and chemical properties. The …
New approaches and understandings in the growth of cubic silicon carbide
In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
Long-lived, transferred crystalline silicon carbide nanomembranes for implantable flexible electronics
Implantable electronics are of great interest owing to their capability for real-time and
continuous recording of cellular–electrical activity. Nevertheless, as such systems involve …
continuous recording of cellular–electrical activity. Nevertheless, as such systems involve …
Integrated, transparent silicon carbide electronics and sensors for radio frequency biomedical therapy
The integration of micro-and nanoelectronics into or onto biomedical devices can facilitate
advanced diagnostics and treatments of digestive disorders, cardiovascular diseases, and …
advanced diagnostics and treatments of digestive disorders, cardiovascular diseases, and …
[HTML][HTML] Highly sensitive and robust 3C-SiC/Si pressure sensor with stress amplification structure
SiC based pressure sensors show tremendous promise for harsh environment applications
thanks to their excellent mechanical, electrical, thermal, and chemical properties. This paper …
thanks to their excellent mechanical, electrical, thermal, and chemical properties. This paper …
Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
This article reviews the development of SiC and GaN devices for power-switching
applications in the context of four specifically identified application requirements:(1) high …
applications in the context of four specifically identified application requirements:(1) high …
Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV
The growth of graphene on SiC/Si substrates is an appealing alternative to the growth on
bulk SiC for cost reduction and to better integrate the material with Si based electronic …
bulk SiC for cost reduction and to better integrate the material with Si based electronic …
Self-powered broadband (UV-NIR) photodetector based on 3C-SiC/Si heterojunction
Self-powered photodetectors (PDs) are highly desirable for many applications, ranging from
smart cities to optical communications. Herein, we report on a selfpowered broadband [UV …
smart cities to optical communications. Herein, we report on a selfpowered broadband [UV …
An on‐chip SiC MEMS device with integrated heating, sensing, and microfluidic cooling systems
There has been increasing interest in electronic systems with integrated microfluidic active
cooling modules. However, the failure of 3C‐SiC/Si interface with increasing temperature …
cooling modules. However, the failure of 3C‐SiC/Si interface with increasing temperature …
Ultra-sensitive self-powered position-sensitive detector based on horizontally-aligned double 3C-SiC/Si heterostructures
Position-sensitive detectors (PSDs) utilising the lateral photovoltaic effect (LPE) are actively
being explored to achieve precise optical alignments for applications such as surface …
being explored to achieve precise optical alignments for applications such as surface …