A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based …

V d'Alessandro, AP Catalano, C Scognamillo, M Müller… - Electronics, 2023 - mdpi.com
This paper presents a critical and detailed overview of experimental techniques for the
extraction of the thermal resistance of bipolar transistors from simple DC current/voltage …

A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations

R Wu, H Wang, KB Pedersen, K Ma… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
A basic challenge in the insulated gate bipolar transistor (IGBT) transient simulation study is
to obtain the realistic junction temperature, which demands not only accurate electrical …

Methods for extracting the temperature-and power-dependent thermal resistance for SiGe and III-V HBTs from DC measurements: A review and comparison across …

M Müller, V d'Alessandro, S Falk… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Many different methods have been proposed in the literature for the extraction of the thermal
resistance of heterojunction bipolar transistors (HBTs). This review presents a detailed …

Experimental determination, modeling, and simulation of nonlinear thermal effects in bipolar transistors under static conditions: A critical review and update

V d'Alessandro, AP Catalano, C Scognamillo, M Müller… - Energies, 2022 - mdpi.com
This paper presents a comprehensive overview of nonlinear thermal effects in bipolar
transistors under static conditions. The influence of these effects on the thermal resistance is …

Characterization of thermal resistance coefficient of high-power LEDs

L Jayasinghe, Y Gu… - … Conference on Solid State …, 2006 - spiedigitallibrary.org
Heat at the junction of light-emitting diodes (LED) affects the overall performance of the LED
in terms of light output, spectrum, and life. Usually it is difficult to measure junction …

Power losses and current distribution studies by infrared thermal imaging in soft-and hard-switched IGBTs under resonant load

M Fernández, X Perpiñà, M Vellvehi… - … on Power Electronics, 2019 - ieeexplore.ieee.org
A test bench is proposed to study, at die-level, the power losses and current distribution in
power devices. It is based on an infrared camera and a flexible half-bridge resonant inverter …

Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies

V d'Alessandro, AP Catalano, A Magnani… - Microelectronics …, 2017 - Elsevier
This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs
HBTs for handset applications in a laminate (package) environment. Both wire-bonding and …

Compact dynamic modeling for fast simulation of nonlinear heat conduction in ultra-thin chip stacking technology

L Codecasa, V d'Alessandro… - IEEE transactions on …, 2014 - ieeexplore.ieee.org
A novel nonlinear model order reduction method is proposed for constructing one-port
dynamic compact models of nonlinear heat diffusion problems for ultra-thin chip stacking …

On the formulation of self-heating models for circuit simulation

L Zhang, D Song, Y Xiao, X Lin… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
Different approaches to implement self-heating effects in a compact model are evaluated.
The traditional approach using a subcircuit with the addition of an internal node can lead to …

Non-linear thermal resistance model for the simulation of high power GaN-based devices

S García-Sánchez, I Íñiguez-de-la-Torre… - Semiconductor …, 2021 - iopscience.iop.org
We report on the modeling of self-heating in GaN-based devices. While a constant thermal
resistance is able to account for the self-heating effects at low power, the decrease of the …