Monte Carlo simulation of single event effects
In this paper, we describe a Monte Carlo approach for estimating the frequency and
character of single event effects based on a combination of physical modeling of discrete …
character of single event effects based on a combination of physical modeling of discrete …
Physics of multiple-node charge collection and impacts on single-event characterization and soft error rate prediction
Physical mechanisms of single-event effects that result in multiple-node charge collection or
charge sharing are reviewed and summarized. A historical overview of observed circuit …
charge sharing are reviewed and summarized. A historical overview of observed circuit …
Single-event transient pulse quenching in advanced CMOS logic circuits
Heavy-ion broad-beam experiments on a 130 nm CMOS technology have shown
anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in …
anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in …
Challenges in testing complex systems
H Quinn - IEEE Transactions on Nuclear Science, 2014 - ieeexplore.ieee.org
Many space programs depend on cutting-edge technology to increase computational power
without increasing the power or weight of the payload. For these types of programs …
without increasing the power or weight of the payload. For these types of programs …
Layout technique for single-event transient mitigation via pulse quenching
NM Atkinson, AF Witulski, WT Holman… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
Layout Technique for Single-Event Transient Mitigation via Pulse Quenching Page 1 IEEE
TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 58, NO. 3, JUNE 2011 885 Layout Technique …
TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 58, NO. 3, JUNE 2011 885 Layout Technique …
Single event upsets in deep-submicrometer technologies due to charge sharing
OA Amusan, LW Massengill, MP Baze… - … on Device and …, 2008 - ieeexplore.ieee.org
Circuit and 3D technology computer aided design mixed-mode simulations show that the
single event upset vulnerability of 130-and 90-nm hardened latches to low linear energy …
single event upset vulnerability of 130-and 90-nm hardened latches to low linear energy …
The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process
Heavy-ion microbeam and broadbeam data are presented for a 65 nm bulk CMOS process
showing the existence of pulse quenching at normal and angular incidence for designs …
showing the existence of pulse quenching at normal and angular incidence for designs …
Device-orientation effects on multiple-bit upset in 65 nm SRAMs
AD Tipton, JA Pellish, JM Hutson… - … on Nuclear Science, 2008 - ieeexplore.ieee.org
The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm
SRAMs are examined. The MBU response is shown to depend on the orientation of the …
SRAMs are examined. The MBU response is shown to depend on the orientation of the …
Single event effect induced multiple-cell upsets in a commercial 90 nm CMOS digital technology
RK Lawrence, AT Kelly - IEEE transactions on nuclear science, 2008 - ieeexplore.ieee.org
Heavy ion and proton single event upset (SEU) testing has been conducted on static
random access memories (SRAM) from two commercial 90 nm technology nodes custom …
random access memories (SRAM) from two commercial 90 nm technology nodes custom …
General framework for single event effects rate prediction in microelectronics
A comprehensive mathematical framework is established that encompasses both Monte
Carlo single event effects (SEE) rate prediction and analytical approximations based on a …
Carlo single event effects (SEE) rate prediction and analytical approximations based on a …