Tunable graphene light-emitting device

CM Torres Jr, JR Adleman, RP Lu… - US Patent 10,121,932, 2018 - Google Patents
A device includes a substrate with a tunnel barrier disposed on active region defined on the
substrate, a monolayer of graphene disposed on the tunnel barrier, a dielectric material …

Circuit including a negative differential resistance (NDR) device having a graphene channel, and method of operating the circuit

SJ Han, YM Lin, Y Wu - US Patent 8,593,180, 2013 - Google Patents
In view of the foregoing and other problems, disadvan tages, and drawbacks of the
aforementioned conventional systems and methods, an exemplary aspect of the present …

Field effect transistors and methods of forming same

PS Chen, SC Pan, CW Liu, ST Fan - US Patent 9,490,430, 2016 - Google Patents
HOIL 29/06(2006.01) are provided. A first gate electrode layer is formed over a HOIL
49/00(2006.01) substrate. A first gate dielectric layer is formed over the first (52) US Cl. gate …

Magnetic field sensor based on topological insulator and insulating coupler materials

AJ Annunziata, JD Chudow, DC Worledge - US Patent 9,941,463, 2018 - Google Patents
Embodiments are directed to a sensor having a first electrode, a second electrode and a
detector region electrically coupled between the first electrode region and the second …

Graphene layer, method of forming the same, device including graphene layer and method of manufacturing the device

KIM Hyowon, J Lee - US Patent 9,660,036, 2017 - Google Patents
A graphene layer, a method of forming the graphene layer, a device including the graphene
layer, and a method of manufacturing the device are provided. The method of forming the …

Thin film transistor, method for producing the same, array substrate and display apparatus

Y Huang - US Patent 10,224,409, 2019 - Google Patents
The present disclosure provides a thin film transistor, a method for producing the same, an
array substrate and a display apparatus. An electrode of the thin film transistor is made of Cu …

Field effect transistors and methods of forming same

PS Chen, SC Pan, CW Liu, ST Fan - US Patent 10,290,708, 2019 - Google Patents
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …

[图书][B] Phonon Analogues to The Topological Su-Schrieffer-heeger (SSH) Mode

A Alseiari - 2023 - search.proquest.com
This thesis examines the topological phonon phases of realistic isotope superlattices (ISL). It
is shown that, in one dimension, the ISL can be mapped onto the Su–Schrieffer–Heeger …

High performance topological insulator transistors

Q Li, CA Richter, H Zhu - US Patent 11,001,497, 2021 - Google Patents
Topological insulators, such as single-crystal Bi 2 Se 3 nanowires, can be used as the
conduction channel in high-performance transistors, a basic circuit building block. Such …

Simplified devices utilizing novel pn-semiconductor structures

TM McQueen, P Cottingham, JP Sheckelton… - US Patent …, 2014 - Google Patents
An electronic or electro-optic device includes a p-type semi conductor layer, an n-type
semiconductor layer having a region of contact with the p-type semiconductor layer to …