Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …

Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an
ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non …

Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between
two metal electrodes and its dependence on ferroelectric polarization direction are …

Ferroelectric tunnel junctions (FTJs) are promising candidates for next-generation memories
due to fast read/write speeds and low-power consumptions. Here, we investigate resistance …

Efficiency is defined as η=| Q|/| W| in order to investigate the electrical work| W| associated
with electrocaloric heat| Q|. This materials parameter indicates that polymer films are slightly …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

We revise the possibility of having an amplified surface potential in ferroelectric field-effect
transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show …

Environmentally friendly ultrathin BaTiO3 capacitors can exhibit a giant stress-induced
elastocaloric effect without hysteresis loss or Joule heating. By combining this novel …

A newly developed fast molecular dynamics method is applied to BaTiO 3 ferroelectric thin-
film capacitors with short-circuited electrodes or under applied voltage. The molecular …