The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in
the last decade as a viable infrared detector material with a continuously adjustable band …

Abstract Ga-free InAs/InAsSb type-II superlattices (T2SL) have extensive application
prospective in infrared photodetectors. Achieving higher operation temperature is critical to …

We calculate the electronic and optical properties of InAs/InAs 0.625 Sb 0.375 superlattices
(SLs) within relativistic density functional theory. To have a good description of the electronic …

We demonstrate room temperature mid-wave infrared detectors with high peak detectivity.
Our detector structures consist of type-II superlattice nBn detectors with ultra-thin (250 nm) …

Gallium-free Type-II superlattices (T2SLs) have emerged as promising candidates for high-
performance long-wavelength infrared (LWIR) detectors at a high operating temperature …

The authors reported a heterojunction dark current simulation method for InAs/GaSb long
wavelength infrared barrier detectors. Calculations using the dark current model with energy …

Рассмотрены основные свойства композиционных сверхрешеток II типа (T2SL).
Приведено описание различных типов гетеропереходв, энергетических условий их …

Photoluminescence (PL) is one of the commonly used methods to determine the energy gap
(E g) of semiconductors. In order to use it correctly, however, the shape of the PL peak must …

Antimonide-based family holds the potential for developing a new generation of mid-infrared
applications. Here, we report on the growth of InSb x As 1-x alloys on n− and p− type GaSb …

The long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs)
and a gallium-free (“Ga-free”) InAs/InAsSb (x= 0.39) absorber was characterized by …