Crystalline oxides on silicon
This review outlines developments in the growth of crystalline oxides on the ubiquitous
silicon semiconductor platform. The overall goal of this endeavor is the integration of …
silicon semiconductor platform. The overall goal of this endeavor is the integration of …
Epitaxial oxides on semiconductors: from fundamentals to new devices
Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …
functionalities can range from high temperature superconductivity to multiferroicity and novel …
[HTML][HTML] The physics and chemistry of the Schottky barrier height
RT Tung - Applied Physics Reviews, 2014 - pubs.aip.org
The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …
A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
The rapidly increasing global demand for energy combined with the environmental impact of
fossil fuels has spurred the search for alternative sources of clean energy. One promising …
fossil fuels has spurred the search for alternative sources of clean energy. One promising …
High-latitude controls of thermocline nutrients and low latitude biological productivity
The ocean's biological pump strips nutrients out of the surface waters and exports them into
the thermocline and deep waters. If there were no return path of nutrients from deep waters …
the thermocline and deep waters. If there were no return path of nutrients from deep waters …
A ferroelectric oxide made directly on silicon
MP Warusawithana, C Cen, CR Sleasman, JC Woicik… - Science, 2009 - science.org
Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon,
have undergone four decades of staggering technological advancement. With fundamental …
have undergone four decades of staggering technological advancement. With fundamental …
Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer
In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …
[图书][B] Electronic properties of semiconductor interfaces
W Mönch - 2013 - books.google.com
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor,
insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic …
insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic …
Experimental determination of valence band maxima for and SrO and the associated valence band offsets with Si(001)
SA Chambers, T Droubay, TC Kaspar… - Journal of Vacuum …, 2004 - pubs.aip.org
We address the issue of accurate determination of the valence band maximum (VBM) for
SrTiO 3 (001) single crystals and epitaxial films, as well as TiO 2 (001) anatase and SrO …
SrTiO 3 (001) single crystals and epitaxial films, as well as TiO 2 (001) anatase and SrO …
The interface between silicon and a high-k oxide
The ability of the semiconductor industry to continue scaling microelectronic devices to ever
smaller dimensions (a trend known as Moore's Law) is limited by quantum mechanical …
smaller dimensions (a trend known as Moore's Law) is limited by quantum mechanical …