The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …

The passivation of III–V semiconductor materials with sulphur is widely reported to reduce
interface state defects and improve semiconductor device performance. The most common …

InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been
proposed as an alternative to InAs/(In) GaSb short period superlattices for mid-to long …

Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap
barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The …

This paper reports the results of modeling of electrical characteristics of midinfrared type II In
As∕ Ga Sb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with …

Uncooled infrared photodetectors are essential for infrared technology that aims to provide
low-cost, compact detection systems for widespread applications, which are particularly …

We report on high operating temperature midwave infrared detectors based on type II In
As∕ Ga Sb superlattices (SLs) with a p-on-n polarity. All In As∕ Ga Sb SLs photodiodes …

The development of type-II InAs/GaSb superlattice (SL) detectors with nBn and pin designs
for the long-wave infrared (LWIR) spectral region is discussed. The dependence of dark …

We demonstrate high-performance mid-wavelength pin infrared detectors based on
InAs/GaSb type-II superlattices (SLs) grown by a production-scale metalorganic chemical …

We report on the measurement of the background carrier concentration of midwave and long-
wave infrared (MWIR and LWIR) type-II InAs/GaSb superlattices (SLs) on GaAs substrates …