Wet chemical cleaning is central to semiconductor device processing. For InP-based
optoelectronic devices, controlling wet processing is challenging because of the high …

We present our studies on low energy electron beam induced damage to gallium nitride
semiconductor material. We have observed a clear reduction in InGaN single quantum well …

The goal of this research is to highlight the effectiveness of associating the spectroscopic
methods EELS and EPES in the study of thin film grown on substrates. We use the great …

The interaction of ions with matter plays an important role in the treatment of material
surfaces. In this paper we study the effect of argon ion bombardment on the InSb surface in …

In this study, the EELS results revealed the great sensitivity of InP compound submitted to
Ar+ or N+ ions at low energy. The preliminary treatment of InP by the Ar+ ions was useful as …

In this work, the behavior of gallium nitride and indium gallium nitride under low energy
electron beam irradiation (LEEBI) has been investigated. Furthermore, a periodic silver …

In this article, we study the thin films ZnO and SnO2 of 500 Å, grown by cathodic RF
sputtering on the substrates InP (100) and Ag, respectively, by using auger electron …

Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) have
been performed in order to investigate the InP (100) surface subjected to ions bombardment …

ABSTRACT Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy
(EELS) have been performed in order to investigate the InP (100) surface subjected to ions …

We give the great interest to characterise the InP and InPO 4/InP submitted to electron beam
irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods …