The evolution of next-generation cellular networks is aimed at creating faster, more reliable
solutions. Both the next-generation 6G network and the metaverse require high transmission …

This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-
shaped channels on bulk GaN substrates. In this vertical transistor design only n-GaN layers …

Nanowire-based devices can potentially be of use in a variety of electronic applications,
from ultrascaled digital circuits to 5G communication networks. However, the devices are …

In this work, the size-dependent effect for InGaN/GaN-based blue micro-light emitting diodes
(µLEDs) is numerically investigated. Our results show that the external quantum efficiency …

Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

We have investigated the relationship between improved electrical properties of Al 2 O
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …

(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …

In this letter, a device structure of high-resistivity-cap-layer HEMT (HRCL-HEMT) is
developed for normally-off p-GaN gate HEMT toward high breakdown voltage and low …

Nitrogen polar (N-Polar) GaN high-electron-mobility transistors (HEMT) targeting high-
voltage switching applications were fabricated on epi-layers grown by metal-organic …