Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …

Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in many solid-state
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

A heterojunction is an essential strategy for multispectral energy-conservation
photodetection for its ability to separate photogenerated electron–hole pairs and tune the …

A recent experiment reported a large anomalous Hall effect in magic angle twisted bilayer
graphene (TBG) aligned with a hexagonal boron nitride (h-BN) substrate at 3/4 filling of the …

We study superconductivity of twisted bilayer graphene with local and nonlocal attractive
interactions. We obtain the superfluid weight and Berezinskii-Kosterlitz-Thouless (BKT) …

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …

UV ray detection near the earth surface has become urgent due to the serious effects of UV
rays on human health, the environment and the biological evolution; therefore, the …

The development and applications of transition metal carbides, nitrides and carbonitrides,
commonly denoted as MXenes, have during the last few years rapidly expanded in various …