Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness
and biocompatibility, making it a promising material for applications in biomedical device …

Silicon–carbon nitride (SiCN) thin films were deposited on Si substrate at room temperature
by rf reactive sputtering. Fourier transform infrared spectroscopy (FTIR), optical absorption …

Low-k dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric for
interconnects in state of the art integrated circuits. In order to further reduce interconnect RC …

The structural and optical properties of hydrogenated amorphous silicon carbon (a-SiC: H)
thin films, grown from pure SiH4, C2H2 and H2 mixture by hot wire chemical vapor …

Thermal annealing and oxidation effects in hydrogenated (a-SiC: H) and nonhydrogenated
(a-SiC) amorphous silicon–carbon alloy films deposited by radio-frequency magnetron …

Amorphous hydrogenated silicon carbide (a-SiCx: H) films were fabricated via plasma-
enhanced chemical vapor deposition (PECVD) at a low substrate temperature. The …

Thin films of a-SiC: H and a-SiC: H (F) deposited under high ion bombardment at room
temperature by plasma-enhanced chemical vapor deposition were annealed at …

SiC nanometric powder has been obtained in square-wave modulated radiofrequency glow
discharges from CH4 and SiH4 gas mixtures. Chemical and structural characterization …

Amorphous silicon carbide (a-Sir I, $,: H) samples having x< 0.4 were studied by infrared
and visible spectroscopy. Treatment by factor analysis of the 2000-2100 cm-'absorption …

Hydrogenated amorphous silicon carbide (Si x C y H z) films were synthesized by plasma-
enhanced chemical vapor deposition using monomethylsilane (CH 3 SiH 3) as the …