The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode …

Z Sun, S Chen, L Zhang, R Huang, R Wang - Micromachines, 2024 - mdpi.com
With the technological scaling of metal–oxide–semiconductor field-effect transistors
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …

Transient self-heating effects on mixed-mode hot carrier and bias temperature instability in FinFETs: Experiments and modeling

Z Sun, W Luo, Y Jiao, Z Zhang, J Song… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The self-heating effect (SHE) is a critical issue in nanoscale fin field effect transistors
(FinFETs) that has emerged as an essential concern for device reliability. In physical circuit …

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations

M Vandemaele, B Kaczer, E Bury… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
We report TCAD simulation studies on nanowire (NW), nanosheet (NS) and forksheet (FS)
FET hot-carrier relia-bility. The simulations entail i) solving the Boltzmann transport equation …

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET

J Qu, D Liu, B Chen, Y Sun, X Li, C Jin… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
In this work, we report a non-monotonical temperature dependence of hot carrier injection
(HCI) degradation for 14 nm Si FinFETs operated at low temperatures (LT). Multiple trap …

Self-Heating Influence on Hot Carrier Degradation Reliability of GAA FET by 3D KMC Method

S Zhao, P Zhao, Y He, G Du - 2023 International Conference on …, 2023 - ieeexplore.ieee.org
The self-heating coupling of the hot carrier degradation effect is studied in detail. The results
show that self-heating has a strong activation impact on hot carrier degradation. By …