[HTML][HTML] Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film
Ion irradiation is a key tool for controlling the nanostructure, phase content, and physical
properties of refractory ceramic thin films grown at low temperatures by magnetron …
properties of refractory ceramic thin films grown at low temperatures by magnetron …
A review of the intrinsic ductility and toughness of hard transition-metal nitride alloy thin films
Over the past decades, enormous effort has been dedicated to enhancing the hardness of
refractory ceramic materials. Typically, however, an increase in hardness is accompanied by …
refractory ceramic materials. Typically, however, an increase in hardness is accompanied by …
Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017
JE Greene - Journal of Vacuum Science & Technology A, 2017 - pubs.aip.org
The use of thin films to enhance the physical and chemical properties of materials is
ubiquitous in today's world. Examples are shown in Fig. 1: copper metallization layers for …
ubiquitous in today's world. Examples are shown in Fig. 1: copper metallization layers for …
Valence electron concentration as an indicator for mechanical properties in rocksalt structure nitrides, carbides and carbonitrides
K Balasubramanian, SV Khare, D Gall - Acta Materialia, 2018 - Elsevier
First-principles calculations are employed to determine the mechanical properties of rock-
salt structure binary and ternary transition metal nitrides, carbides, and carbonitrides from …
salt structure binary and ternary transition metal nitrides, carbides, and carbonitrides from …
[HTML][HTML] Atomistic mechanisms underlying plasticity and crack growth in ceramics: a case study of AlN/TiN superlattices
Interfaces between components of a material govern its mechanical strength and fracture
resistance. While a great number of interfaces is present in nanolayered materials, such as …
resistance. While a great number of interfaces is present in nanolayered materials, such as …
Thermo-mechanical behavior of low-dimensional systems: The local bond average approach
CQ Sun - Progress in Materials Science, 2009 - Elsevier
With the miniaturization of a solid, effects of surface strain and quantum trapping become
increasingly important in determining its properties. As a result, low-dimensional materials …
increasingly important in determining its properties. As a result, low-dimensional materials …
Energetics of point defects in rocksalt structure transition metal nitrides: Thermodynamic reasons for deviations from stoichiometry
K Balasubramanian, SV Khare, D Gall - Acta Materialia, 2018 - Elsevier
First principle calculations of point defect formation energies in group 3–6 transition metal
(Me) nitrides MeN x are employed to explain the thermodynamic reasons for the large …
(Me) nitrides MeN x are employed to explain the thermodynamic reasons for the large …
Supertoughening in B1 transition metal nitride alloys by increased valence electron concentration
DG Sangiovanni, L Hultman, V Chirita - Acta Materialia, 2011 - Elsevier
We use density functional theory calculations to explore the effects of alloying cubic TiN and
VN with transition metals M= Nb, Ta, Mo or W at 50% concentrations. The ternary systems …
VN with transition metals M= Nb, Ta, Mo or W at 50% concentrations. The ternary systems …
Scalable all-ceramic nanofilms as highly efficient and thermally stable selective solar absorbers
The pressing demands for next-generation concentrating solar power drive the pursuit of
high-efficiency, thermally stable, and scalable spectrally selective absorbers. Multilayer …
high-efficiency, thermally stable, and scalable spectrally selective absorbers. Multilayer …
Hard and tough (NbTaMoW) Nx high entropy nitride films with sub-stoichiometric nitrogen
Abstract (NbTaMoW) N x films with different x value were prepared by reactive magnetron
sputtering in a mixed Ar/N 2 atmosphere at 575 K. The films deposited at f N (f N= N 2/Ar+ N …
sputtering in a mixed Ar/N 2 atmosphere at 575 K. The films deposited at f N (f N= N 2/Ar+ N …