The impact of alpha particle and exposure to cosmic radiation has multifold the existing
stability issue associated with modern sub-100 nm SRAM cell design. Noise insertion in the …

This article introduces an optimization of optical network system using the residual power of
doped-fiber amplifier (EDFA) and optimized dispersion management by fiber bragg grating …

Static or leakage power is the dominating component of total power dissipation in deep
nanometer technologies below 90 nm, which has resulted in increase from 18% at 130 nm …

The enormous demand for electronic devices has sparked a new revolution in VLSI
technology. VLSI technology applications have extensively expanded to various electronic …

Static random access memory power and speed dissipation are the significant factor in most
of the electronic applications, which prompts numerous plans with the power utilization of …

Energy consumption and data stability are vital requirement of cache in embedded
processor. SRAM is a natural choice for cache memory owing to their speed and energy …

The semiconductor electronic industry is advancing at a very fast pace. The size of portable
and handheld devices are shrinking day by day and the demand for longer battery backup is …

The read instability of conventional 6T-SRAM cell has made the 8T-SRAM cell a substitute
for high data reliability. But the single ended nature of read operation demands a complete V …

In the era of nanotechnology, leakage current, active power, delay, area bear an important
metric for design and analysis of complex arithmetic logic circuits. In this paper major work …

Technology scaling facilitates to meet ever increasing demands for a portable and battery
operated systems, at the same time causes diminution of length of the channel, gate oxide …