Defect engineering in multinary earth‐abundant chalcogenide photovoltaic materials
Application of zinc‐blende‐related chalcogenide absorbers such as CdTe and Cu (In, Ga)
Se2 (CIGSe) has enabled remarkable advancement in laboratory‐and commercial‐scale …
Se2 (CIGSe) has enabled remarkable advancement in laboratory‐and commercial‐scale …
Photoluminescence of AlxGa1−xAs alloys
L Pavesi, M Guzzi - Journal of Applied Physics, 1994 - pubs.aip.org
A thorough discussion of the various features of the photoluminescence spectra of undoped,
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …
Hot-electron nanoscopy using adiabatic compression of surface plasmons
Surface plasmon polaritons are a central concept in nanoplasmonics and have been
exploited to develop ultrasensitive chemical detection platforms, as well as imaging and …
exploited to develop ultrasensitive chemical detection platforms, as well as imaging and …
Carrier concentration dependence of band gap shift in n-type ZnO: Al films
JG Lu, S Fujita, T Kawaharamura… - Journal of Applied …, 2007 - pubs.aip.org
Al-doped ZnO (AZO) thin films have been prepared by mist chemical vapor deposition and
magnetron sputtering. The band gap shift as a function of carrier concentration in n-type zinc …
magnetron sputtering. The band gap shift as a function of carrier concentration in n-type zinc …
A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1− x strained layers
SC Jain, DJ Roulston - Solid-State Electronics, 1991 - Elsevier
This paper presents simple but accurate closed form equations for Band Gap Narrowing
(BGN) for n and p type, Si, Ge, GaAs and Ge x Si 1− x alloys and strained layers. The …
(BGN) for n and p type, Si, Ge, GaAs and Ge x Si 1− x alloys and strained layers. The …
Synthesis, characterization and visible light-responsive photocatalysis properties of Ce doped CuO nanoparticles: a combined experimental and DFT+ U study
In this work, CuO and Ce doped CuO (Ce: CuO) nanoparticles (NPs) were prepared by the
sol-gel auto-combustion process. The effect of the concentration of Ce doping (0, 2%, 4 …
sol-gel auto-combustion process. The effect of the concentration of Ce doping (0, 2%, 4 …
[图书][B] Analysis and simulation of heterostructure devices
V Palankovski, R Quay - 2004 - books.google.com
Communication and information systems are subject to rapid and highly so phisticated
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
[HTML][HTML] Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility
R Alcotte, M Martin, J Moeyaert, R Cipro, S David… - Apl Materials, 2016 - pubs.aip.org
Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si (001)
wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm …
wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm …
[HTML][HTML] Increasing the photocatalytic efficiency of ZnWO4 by synthesizing a Bi2WO6/ZnWO4 composite photocatalyst
Highlights•Bi 2 WO 6/ZnWO 4 photocatalyst was synthesized through modified hydrothermal
process.•Study of bandgap energy and crystallite size of the composite photocatalyst.•The …
process.•Study of bandgap energy and crystallite size of the composite photocatalyst.•The …
Simultaneously Controllable Doping Sites and the Activity of a W–N Codoped TiO2 Photocatalyst
Tungsten–nitrogen (W–N) codoping has been known to enhance the photocatalytic activity
of anatase TiO2 nanoparticles by utilizing visible light. The doping effects are, however …
of anatase TiO2 nanoparticles by utilizing visible light. The doping effects are, however …