We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We show that the band gap bowing trends observed in III-V alloys containing dilute
concentrations of Sb or Bi can be explained within the framework of the valence-band …

Doping limits in semiconductors are discussed in terms of the amphoteric defect model
(ADM). It is shown that the maximum free electron or hole concentration that can be …

Infrared reflection experiments were performed on wurtzite InN films with a range of free-
electron concentrations grown by molecular-beam epitaxy. Measurements of the plasma …

In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …

We report the realization of a new mult-band-gap semiconductor. Z n 1-y M ny O x T e 1-x
alloys have been synthesized using the combination of oxygen ion implantation and pulsed …

In this paper, we carry out a comprehensive review of the nitrogen-induced modifications of
the electronic structure of Ga 1− y In y N x As 1− x alloys. We study in detail the behaviour of …

We have synthesized GaN x As 1− y P y alloys (⁠ x∼ 0.003− 0.01 and y= 0–0.4⁠) using
nitrogen (N) ion implantation into GaAsP epilayers followed by pulsed laser melting and …