[HTML][HTML] A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics
Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-
FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of I on/I off …
FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of I on/I off …
[HTML][HTML] Low delay time all optical NAND, XNOR and OR Logic gates based on 2D photonic crystal structure
F Parandin, M Malmir - Journal of Electrical and Computer …, 2020 - jecei.sru.ac.ir
Background and Objectives: Recently, photonic crystals have been considered as the basic
structures for the realization of various optical devices for high speed optical communication …
structures for the realization of various optical devices for high speed optical communication …
Performance investigation and optimization of 2-D material based double gate tunneling field-effect transistor (DG-TFET)
R Paul - 2022 International conference on advancement in …, 2022 - ieeexplore.ieee.org
The aggressive reduction of FET devices predicted in Moore's law has escorted us to an
exponential decrease in device performance. Shifting from existing FET devices to …
exponential decrease in device performance. Shifting from existing FET devices to …
Novel perspective approach to improve performance of nanowire tfet
A Nanowire TFET device employing a Dual Metal Gate along with a combination of lower
energy band gap III-V material for the source and Doping Pockets around the SC-junction to …
energy band gap III-V material for the source and Doping Pockets around the SC-junction to …
Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior
To recuperate subthreshold characteristics and short channel endurance of gate-all-around
field effect transistors (GAA-FETs) by scaling, we incorporate an auxiliary gate with an …
field effect transistors (GAA-FETs) by scaling, we incorporate an auxiliary gate with an …
Enhancement of Double Gate Tunnel Field Effect Transistor Structures with Different Variable Parameters
NS Tallapaneni, M Venkatesan - 2023 7th International …, 2023 - ieeexplore.ieee.org
TFET is enhanced with the modified structure by the double gate used above the channel
transistor with silicon and germanium forming hetero junction and used dielectric materials …
transistor with silicon and germanium forming hetero junction and used dielectric materials …
Design and Drain Current Characteristics of L-Shaped Dielectric TFET with work function Engineering
NS Tallapaneni, M Venkatesan - 2023 Fifth International …, 2023 - ieeexplore.ieee.org
The Tunnel Field Effect Transistor (TFET) is modified internally with a novel L-shaped with
two different dielectric materials in 5nm technology using the TCAD tool. The proposed …
two different dielectric materials in 5nm technology using the TCAD tool. The proposed …
[HTML][HTML] Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs
Z Kordrostami, S Hamedi, F Khalifeh - Journal of Electrical and …, 2019 - journals.sru.ac.ir
Background and Objectives: High electron mobility transistors (HEMTs) are designed so that
they are able to work at higher frequencies than conventional transistors and this has made …
they are able to work at higher frequencies than conventional transistors and this has made …