Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes
H Sato, H Hirasawa, RB Chung, SP DenBaars… - US Patent …, 2012 - Google Patents
(57) ABSTRACT A yellow Light Emitting Diode (LED) with a peak emission wavelength in
the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based …
the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based …
Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes
DF Feezell, MC Schmidt, SP DenBaars, S Nakamura - MRS bulletin, 2009 - cambridge.org
This article reviews the development of nonpolar and semipolar InGaN/GaN light-emitting
diodes (LEDs), emphasizing structures on freestanding bulk GaN. A brief history of LED …
diodes (LEDs), emphasizing structures on freestanding bulk GaN. A brief history of LED …
High light extraction efficiency nitride based light emitting diode by surface roughening
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least
one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured …
one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured …
(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates
J Bai, B Xu, FG Guzman, K Xing, Y Gong, Y Hou… - Applied Physics …, 2015 - pubs.aip.org
We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the
green, yellow-green, yellow and amber spectral region. The LEDs are grown on our …
green, yellow-green, yellow and amber spectral region. The LEDs are grown on our …
Continuous-wave operation of blue laser diodes based on nonpolar m-plane gallium nitride
M Kubota, K Okamoto, T Tanaka… - Applied physics …, 2007 - iopscience.iop.org
The continuous-wave (cw) operation of m-plane InGaN-based blue (460 nm) laser diodes
(LDs) has been achieved. The threshold current and the corresponding threshold current …
(LDs) has been achieved. The threshold current and the corresponding threshold current …
Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
T Liu, J Zhang, X Su, J Huang, J Wang, K Xu - Scientific Reports, 2016 - nature.com
Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are
generally grown along the [0001]-direction of the wurtzite structure on currently available …
generally grown along the [0001]-direction of the wurtzite structure on currently available …
Efficiency droop in GaInN/GaN LEDs
This chapter will discuss widely studied but still debated topic in GaInN/GaN light emitting
diodes (LEDs): efficiency droop. Efficiency droop refers to the reduction of efficiency with …
diodes (LEDs): efficiency droop. Efficiency droop refers to the reduction of efficiency with …
Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (1122) gallium nitride substrates
H Asamizu, M Saito, K Fujito, JS Speck… - Applied physics …, 2008 - iopscience.iop.org
Abstract Semipolar (1122) plane III–nitride laser diodes (LDs) were realized on low
extended defect density semipolar (1122) GaN bulk substrates. The LD structures were …
extended defect density semipolar (1122) GaN bulk substrates. The LD structures were …