We demonstrate a capability of deterministic doping at the single atom level using a
combination of direct write focused ion beam and solid-state ion detectors. The focused ion …

Interest in single‐ion implantation is driven in part by research into development of solid‐
state devices that exhibit quantum behaviour in their electronic or optical characteristics …

Colloidal gold nanoparticles represent technological building blocks which are easy to
fabricate while keeping full control of their shape and dimensions. Here, we report on a …

The demonstration of universal quantum logic operations near the fault-tolerance threshold
has established ion-implanted near-surface donor atoms as a plausible platform for scalable …

The freely available “Stopping and Range of Ions in Matter”(SRIM) code is used for
evaluating ion beam ranges and depth profiles. We present secondary ion mass …

Electronic devices that are designed to use the properties of single atoms such as donors or
defects have become a reality with recent demonstrations of donor spectroscopy, single …

The Nab experiment at Oak Ridge National Laboratory, USA, aims to measure the beta-
antineutrino angular correlation following neutron β decay to an anticipated precision of …

The thermal spike model developed for the electronic stopping power regime is extended to
consider both ionization and nuclear energy loss processes of the projectile as electronic …

Avalanche silicon photodiodes have potential applications to detect low energy single ions
for counting single ion impacts in shallow implant depths for the deterministic doping of …