Stress/strain characterization in electronic packaging by micro-Raman spectroscopy: A review
L Ma, W Qiu, X Fan - Microelectronics Reliability, 2021 - Elsevier
In this review, a review a of the applications of micro-Raman spectroscopy (μRS) to
characterize the residual strain and/or stress in electronic packaging is presented. Micro …
characterize the residual strain and/or stress in electronic packaging is presented. Micro …
Semiconductor piezoresistance for microsystems
AA Barlian, WT Park, JR Mallon… - Proceedings of the …, 2009 - ieeexplore.ieee.org
Piezoresistive sensors are among the earliest micromachined silicon devices. The need for
smaller, less expensive, higher performance sensors helped drive early micromachining …
smaller, less expensive, higher performance sensors helped drive early micromachining …
[PDF][PDF] Silicon piezoresistive stress sensors and their application in electronic packaging
JC Suhling, RC Jaeger - IEEE sensors journal, 2001 - js-engineering.com
Structural reliability of integrated circuit (IC) chips in electronic packages continues to be a
major concern due to ever-increasing die size, circuit densities, power dissipation, operating …
major concern due to ever-increasing die size, circuit densities, power dissipation, operating …
MOSFET-embedded microcantilevers for measuring deflection in biomolecular sensors
G Shekhawat, SH Tark, VP Dravid - Science, 2006 - science.org
A promising approach for detecting biomolecules follows their binding to immobilized probe
molecules on microfabricated cantilevers; binding causes surface stresses that bend the …
molecules on microfabricated cantilevers; binding causes surface stresses that bend the …
Piezoresistive characteristics of short-channel MOSFETs on (100) silicon
AT Bradley, RC Jaeger, JC Suhling… - IEEE Transactions on …, 2001 - ieeexplore.ieee.org
This paper demonstrates that the intrinsic piezoresistive response of the MOSFET channel is
independent of length. The reported fall-off of the piezoresistive response of the transistor in …
independent of length. The reported fall-off of the piezoresistive response of the transistor in …
TSV stress-aware full-chip mechanical reliability analysis and optimization for 3D IC
Three-dimensional integrated circuit (3D IC) with through-silicon-via (TSV) is believed to
offer new levels of efficiency, power, performance, and form-factor advantages over the …
offer new levels of efficiency, power, performance, and form-factor advantages over the …
A spiking and adapting tactile sensor for neuromorphic applications
T Birkoben, H Winterfeld, S Fichtner, A Petraru… - Scientific reports, 2020 - nature.com
The ongoing research on and development of increasingly intelligent artificial systems
propels the need for bio inspired pressure sensitive spiking circuits. Here we present an …
propels the need for bio inspired pressure sensitive spiking circuits. Here we present an …
Phonon-limited mobility for electrons and holes in highly-strained silicon
Strain engineering is a widely used technique for enhancing the mobility of charge carriers
in semiconductors, but its effect is not fully understood. In this work, we perform first …
in semiconductors, but its effect is not fully understood. In this work, we perform first …
Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs
T Sugiura, K Matsuda, N Nakano - IEEE Journal of the Electron …, 2023 - ieeexplore.ieee.org
The field of piezoresistance has mainly advanced through experimental research; however,
the improved accuracy of simulations and the emergence of new materials have increased …
the improved accuracy of simulations and the emergence of new materials have increased …