In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …

Harvesting nonequilibrium hot carriers from plasmonic-metal nanostructures offers unique
opportunities for driving photochemical reactions at the nanoscale. Despite numerous …

Silicon carbide (SiC) and gallium nitride (GaN) are excellent wide band gap materials for
power electronics. In spite of the significant progresses achieved in the last years, there are …

Micro-light-emitting diodes (μLEDs) have gained significant interest as an activation source
for gas sensors owing to their advantages, including room temperature operation and low …

GaN-based semiconductors are of great technological importance for the fabrication of
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …

Counterfeit electronics are a growing problem for the electronic information industry
worldwide, so developing unbreakable security tags is crucial to ensure the trustworthiness …

Micro light-emitting diodes (micro-LEDs) are pivotal in next-generation display technologies,
driven by the need for high pixel density. This study introduces a novel methodology utilizing …

Novel nitride-based heterostructures have been fabricated demonstrating two-dimensional
hole gases as the basis for p-channel transistors. The carrier density in the 2DHG is …

In this work, we explore the possibility of using hybrid graphene/GaN phototransistors to get
high responsivity, high speed, and large photosensitive area. The responsivity of our hybrid …

The mechanism for ohmic contact formation of Ni∕ Ag contacts on p-type GaN was
investigated using synchrotron photoemission spectroscopy. A low contact resistivity of 6.6× …