Resistive volatile/non-volatile floating electrode logic/memory cell
M Orlowski, T Liu, M Verma, Y Kang - US Patent 9,792,985, 2017 - Google Patents
A resistive floating electrode device (RFED) provides a logic cell or non-volatile storage or
dynamic or static random access memory on an extremely compact matrix with individual …
dynamic or static random access memory on an extremely compact matrix with individual …
Switching device structures and methods
GS Sandhu - US Patent 8,737,114, 2014 - Google Patents
BACKGROUND A Switching device is an electrical component that can break an electrical
circuit, interrupting the current or divert ing it from one conductor to another. A Switching …
circuit, interrupting the current or divert ing it from one conductor to another. A Switching …
Process for manufacturing micro-and nano-devices
S Roy - US Patent 7,776,227, 2010 - Google Patents
A method of depositing or etching a micro-or nano-scale pattern on a work piece is
disclosed, including the steps of:(a) placing the work piece in an electrochemical reactor in …
disclosed, including the steps of:(a) placing the work piece in an electrochemical reactor in …
Switching device structures and methods
GS Sandhu - US Patent 9,331,275, 2016 - Google Patents
US9331275B2 - Switching device structures and methods - Google Patents US9331275B2 -
Switching device structures and methods - Google Patents Switching device structures and …
Switching device structures and methods - Google Patents Switching device structures and …
Switching device structures and methods
GS Sandhu - US Patent 9,478,740, 2016 - Google Patents
US9478740B2 - Switching device structures and methods - Google Patents US9478740B2 -
Switching device structures and methods - Google Patents Switching device structures and …
Switching device structures and methods - Google Patents Switching device structures and …
Switching atomic transistor and method for operating same
JP Hong, GH Baek, AR Lee, TY Kim - US Patent 11,258,009, 2022 - Google Patents
Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of
operating the same. By introducing a diffusion barrier layer in an intermediate layer having a …
operating the same. By introducing a diffusion barrier layer in an intermediate layer having a …
Resistive random access memory (RRAM) cell filament formation using current waveforms
S Hariharan, H Van Tran, F Zhou, X Liu… - US Patent …, 2019 - Google Patents
(57) ABSTRACT A memory device includes a metal oxide material disposed between and in
electrical contact with first and second conductive electrodes, and an electrical current …
electrical contact with first and second conductive electrodes, and an electrical current …
Gate controlled atomic switch
T Schimmel, F Xie, C Obermair - US Patent 8,138,522, 2012 - Google Patents
The invention relates to a method for producing a switch element. The invention is
characterized in that the switch element comprises three electrodes that are located in an …
characterized in that the switch element comprises three electrodes that are located in an …