The effect of nitrogen annealing at 1123K for 30min on the structural characteristics of thin
(15nm) thermal Ta2O5 layers on Si was examined by X-ray photoelectron spectroscopy …

The structural, optical and morphological properties of the tantalum pentoxide (Ta 2 O 5) and
SiO 2/Ta 2 O 5 films to be used as an anti-reflective coating (ARC) were investigated …

This paper presents the combined use of mathematical modeling and Auger depth profiling
to study and quantify the oxidation of Ta films over a wide range of temperatures. The …

Bulk cerium film deposited on silicon was transformed into cerium oxide (CeO 2) by post-
sputter oxidation at 400, 600, 800, and 1000° C in nitrogen/oxygen/nitrogen ambient. The …

Ta2O5 films were deposited by conventional electron beam evaporation method and then
annealed in air at different temperature from 873 to 1273K. It was found that the film structure …

Nitrogen‐infused wet oxidation process was carried out for 30 min at dissimilar temperatures
(400° C, 600° C, 800° C, and 1000° C) onto GaxCeyOz films deposited on Si substrate …

Abstract As-deposited Ta-HfO 2 films produced via co-sputtering using different Ta
sputtering powers (120, 150, and 180 W) with a fixed HfO 2 power (160 W) were transformed …

Monodispersed, homogeneous core–shell TaxO@ Ta2O5 (x= 1, 2) composite nanoparticles
(NPs) are successfully synthesized via one-step liquid phase laser ablation (LPLA) of a …

The I–V characteristics of metal-Ta 2 O 5/SiO 2-Si structures are precisely described with a
comprehensive model, for both polarities, in the whole measurement range where there is …

Wet oxidation has been undergone at dissimilar temperatures from 400 until 1000° C for
deposition of high dielectric constant ternary hafnium tantalum oxide films on silicon (Si) …