The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

Transient electron transport and velocity overshoot in wurtzite GaN, InN, and AlN are
examined and compared with that which occurs in GaAs. For all materials, we find that …

An overview is presented of progress in GaN electronic devices for high‐power, high‐
temperature applications. The wide bandgaps of the nitride materials, their excellent …

Ga 2 O 3 (Gd 2 O 3) was deposited on GaN for use as a gate dielectric in order to fabricate a
depletion metal–oxide–semiconductor field-effect transistor (MOSFET). Analysis of the effect …

We present a systematic approach to reduce the resistance of ohmic contacts on
AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the …

The present stage of development for the AlN-GaN-InN class of III-V nitrides is reviewed,
with emphasis on the electronic properties of the materials. We also briefly cover the most …

Gd 2 O 3 has been deposited epitaxially on GaN using elemental Gd and an electron
cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross …

A femtosecond optically detected time-of-flight technique that monitors the change in the
electroabsorption associated with the transport of photogenerated carriers in a GaN p–i–n …

We review pyroelectric and piezoelectric properties of GaN-based materials. Pyroelectric
effects in GaN have been studied in two different regimes:(i) uniform sample heating regime …