From optical magnetic resonance to dielectric nanophotonics (A review)
The current state of research in the field of dielectric nanophotonics has been
reviewed.“Dielectric nanophotonics” is considered to mean the field of science that studies …
reviewed.“Dielectric nanophotonics” is considered to mean the field of science that studies …
Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo| CoFeB| MgO structures
We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in
annealed Mo| CoFeB| MgO layered structures. The interfacial perpendicular magnetic …
annealed Mo| CoFeB| MgO layered structures. The interfacial perpendicular magnetic …
Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions
Y Shao, P Khalili Amiri - Advanced Materials Technologies, 2023 - Wiley Online Library
This article discusses the current state of development, open research opportunities, and
application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the …
application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the …
[HTML][HTML] Resonance-enhanced waveguide-coupled silicon-germanium detector
L Alloatti, RJ Ram - Applied Physics Letters, 2016 - pubs.aip.org
A photodiode with 0.55±0.1 A/W responsivity at a wavelength of 1176.9 nm has been
fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant …
fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant …
Cubic anisotropy in (Ga, Mn) As layers: Experiment and theory
M Sawicki, O Proselkov, C Sliwa, P Aleshkevych… - Physical Review B, 2018 - APS
Historically, comprehensive studies of dilute ferromagnetic semiconductors, eg, p-type (Cd,
Mn) Te and (Ga, Mn) As, paved the way for a quantitative theoretical description of effects …
Mn) Te and (Ga, Mn) As, paved the way for a quantitative theoretical description of effects …
[HTML][HTML] Electrical-field and spin-transfer torque effects in CoFeB/MgO-based perpendicular magnetic tunnel junction
C Yoshida, H Noshiro, Y Yamazaki, T Sugii, A Furuya… - AIP Advances, 2016 - pubs.aip.org
The electric-field (E) dependence of the magnetoresistance (RH) loops for top-pinned
perpendicular CoFeB/MgO-based magnetic tunnel junctions (MTJs) in the presence of a …
perpendicular CoFeB/MgO-based magnetic tunnel junctions (MTJs) in the presence of a …
Passivation of InGaAs (001)-(2× 4) by self-limiting chemical vapor deposition of a silicon hydride control layer
M Edmonds, T Kent, E Chagarov… - Journal of the …, 2015 - ACS Publications
A saturated Si–H x seed layer for gate oxide or contact conductor ALD has been deposited
via two separate self-limiting and saturating CVD processes on InGaAs (001)-(2× 4) at …
via two separate self-limiting and saturating CVD processes on InGaAs (001)-(2× 4) at …
Electric field induced domain-wall dynamics: Depinning and chirality switching
We theoretically study the equilibrium and dynamic properties of nanoscale magnetic tunnel
junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic …
junctions (MTJs) and magnetic wires, in which an electric field controls the magnetic …
Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo vertical bar CoFeB vertical bar MgO structures
We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in
annealed Mo vertical bar CoFeB vertical bar MgO layered structures. The interfacial …
annealed Mo vertical bar CoFeB vertical bar MgO layered structures. The interfacial …