Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications

F Zahoor, TZ Azni Zulkifli, FA Khanday - Nanoscale research letters, 2020 - Springer
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

Review of memristor devices in neuromorphic computing: materials sciences and device challenges

Y Li, Z Wang, R Midya, Q Xia… - Journal of Physics D …, 2018 - iopscience.iop.org
The memristor is considered as the one of the promising candidates for next generation
computing systems. Novel computing architectures based on memristors have shown great …

[HTML][HTML] Analog architectures for neural network acceleration based on non-volatile memory

TP Xiao, CH Bennett, B Feinberg, S Agarwal… - Applied Physics …, 2020 - pubs.aip.org
Analog hardware accelerators, which perform computation within a dense memory array,
have the potential to overcome the major bottlenecks faced by digital hardware for data …

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing

H Tian, L Zhao, X Wang, YW Yeh, N Yao, BP Rand… - Acs Nano, 2017 - ACS Publications
Extremely low energy consumption neuromorphic computing is required to achieve
massively parallel information processing on par with the human brain. To achieve this goal …

Metal–oxide RRAM

HSP Wong, HY Lee, S Yu, YS Chen, Y Wu… - Proceedings of the …, 2012 - ieeexplore.ieee.org
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

Oxide-based RRAM materials for neuromorphic computing

XL Hong, DJJ Loy, PA Dananjaya, F Tan… - Journal of materials …, 2018 - Springer
In this review, a comprehensive survey of different oxide-based resistive random-access
memories (RRAMs) for neuromorphic computing is provided. We begin with the history of …

An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation

S Yu, Y Wu, R Jeyasingh, D Kuzum… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
The multilevel capability of metal oxide resistive switching memory was explored for the
potential use as a single-element electronic synapse device. TiN/HfO x/AlO x/Pt resistive …

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

S Yu, Y Wu, HSP Wong - Applied Physics Letters, 2011 - pubs.aip.org
HfO x/AlO x bilayer resistive switching devices were fabricated for the study of the switching
dynamics of the metal oxide memory. An exponential voltage-time relationship was …