RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications
J Zhou, H Guo, H Du, Y Zhang, H Qu… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Low-noise amplification performance of an enhancement-mode p-GaN gate high electron
mobility transistor (HEMT) is thoroughly investigated. Featuring a tungsten (W) gate metal …
mobility transistor (HEMT) is thoroughly investigated. Featuring a tungsten (W) gate metal …
16-way Ka-band power combiner using novel waveguide transitions
In this article, we present the design, manufacturing, and experimental validation of a Ka-
band wide-bandwidth and low-loss 16-way combiner. We specifically focus on the analysis …
band wide-bandwidth and low-loss 16-way combiner. We specifically focus on the analysis …
Innovative development approach for a high-power 8-way coaxial radial combiner
In this work, we enable an 8-way radial combiner with a coaxial interface that revolutionizes
high-power handling. Our innovative approach eliminates the need for small gaps near the …
high-power handling. Our innovative approach eliminates the need for small gaps near the …
A broadband radial power combiner using a dipole antenna-based TM mode transducer
S Park, B Kang, J Jeong - IEEE Access, 2022 - ieeexplore.ieee.org
A TM01 mode transducer based on dipole antenna is proposed to design a broadband and
low-loss radial power combiner at Ka-band (26.5–40 GHz). It is an essential component in …
low-loss radial power combiner at Ka-band (26.5–40 GHz). It is an essential component in …
Demonstration of GaN HEMT MMIC High-Power Amplifier for Lunar Proximity Communications
RN Simons, MT Piasecki, JA Downey… - 2024 IEEE Space …, 2024 - ieeexplore.ieee.org
In this paper, we demonstrate a high efficiency, Ka-band (23.15 to 23.55 GHz) GaN HEMT
MMIC based single-ended high power amplifier (HPA). The measured P out, Gain, PAE …
MMIC based single-ended high power amplifier (HPA). The measured P out, Gain, PAE …
A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique
V Manouras, I Papananos - Journal of Low Power Electronics and …, 2023 - mdpi.com
This paper deals with the design, analysis, and implementation of a Ka-band, single-stage,
quasi-inverse class F power amplifier (PA). A detailed methodology for the evaluation of the …
quasi-inverse class F power amplifier (PA). A detailed methodology for the evaluation of the …
压电AlN MEMS 的新进展(续).
赵正平 - Micronanoelectronic Technology, 2024 - search.ebscohost.com
Si 基微电子机械系统(MEMS) 经过三十余年的发展已进入智能微系统的发展阶段,
已成为当今MEMS 技术创新发展的主流. 当今半导体材料技术的科研已进入超宽禁带半导体的 …
已成为当今MEMS 技术创新发展的主流. 当今半导体材料技术的科研已进入超宽禁带半导体的 …
A Terahertz GaN solid‐state power amplifier on radial combining technique
H Cheng, X Zhu, J Du, W Wang - Microwave and Optical …, 2024 - Wiley Online Library
Terahertz (THz) bands are considered to have various anticipated applications. Output
power is an important factor determining the operating distance of THz systems, but it is very …
power is an important factor determining the operating distance of THz systems, but it is very …
Design of the Radio Frequency Section of a Ka-Band Multiple Beam Ladder-Type Extended Interaction Klystron
S Maity, MS Kumar, C Koley, D Pal… - Electronics, 2022 - mdpi.com
Ka-band frequencies are becoming increasingly popular due to their application potential in
high-data-rate wireless communications relevant to 5G applications, satellite link …
high-data-rate wireless communications relevant to 5G applications, satellite link …
A millimeter Wave MMIC Power Amplifier using 0.15 um GaN for Space Communication Systems
BTV Murthy, TM Manjushree… - … on Smart Systems …, 2024 - ieeexplore.ieee.org
This paper presents the design and performance evaluation of a class AB power amplifier
operating at 27GHz in the Ka-band for satellite communication, utilizing a 0.15μm GaN …
operating at 27GHz in the Ka-band for satellite communication, utilizing a 0.15μm GaN …