[HTML][HTML] The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga… - Journal of Physics D …, 2018 - iopscience.iop.org
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
[HTML][HTML] A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide …
AC Liu, YY Lai, HC Chen, AP Chiu, HC Kuo - Micromachines, 2023 - mdpi.com
In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
S Yang, S Han, K Sheng… - IEEE Journal of Emerging …, 2019 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
Regulating local electric field to optimize the energy storage performance of antiferroelectric ceramics via a composite strategy.
Electrostatic energy storage technology based on dielectrics is the basis of advanced
electronics and high-power electrical systems. High polarization (P) and high electric …
electronics and high-power electrical systems. High polarization (P) and high electric …
A review on GaN-based two-terminal devices grown on Si substrates
Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs),
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices
Bulk traps in the high-resistivity buffer stack underneath the 2-dimensional electron gas
(2DEG), which can interact with the high vertical electric field at OFF state, impose a critical …
(2DEG), which can interact with the high vertical electric field at OFF state, impose a critical …
Enhanced energy storage performance of BNT-ST based ceramics under low electric field via domain engineering
X Chen, D Zhang, H Liu, C Zhou, M Shen, P Liu… - Ceramics …, 2022 - Elsevier
Lead-free bulk ceramics for advanced pulse power capacitors possess low recoverable
energy storage density (W rec) under low electric field. Sodium bismuth titanate (Bi 0.5 Na …
energy storage density (W rec) under low electric field. Sodium bismuth titanate (Bi 0.5 Na …
[HTML][HTML] Vertical breakdown of GaN on Si due to V-pits
S Besendörfer, E Meissner, A Tajalli… - Journal of Applied …, 2020 - pubs.aip.org
Gallium nitride on silicon (GaN/Si) is an important technological approach for power
electronic devices exhibiting superior performance compared to devices based on a pure …
electronic devices exhibiting superior performance compared to devices based on a pure …
Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates
L Pan, X Dong, Z Li, W Luo, J Ni - Applied Surface Science, 2018 - Elsevier
AlGaN/GaN heterostructures were grown on Si (1 1 1) substrates with different AlN
nucleation layers (NL) by metal–organic chemical vapor deposition (MOCVD). The results …
nucleation layers (NL) by metal–organic chemical vapor deposition (MOCVD). The results …
[HTML][HTML] The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
S Besendörfer, E Meissner, F Medjdoub, J Derluyn… - Scientific reports, 2020 - nature.com
GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high
density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and …
density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and …