Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …

Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …

Electrostatic energy storage technology based on dielectrics is the basis of advanced
electronics and high-power electrical systems. High polarization (P) and high electric …

Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs),
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …

Bulk traps in the high-resistivity buffer stack underneath the 2-dimensional electron gas
(2DEG), which can interact with the high vertical electric field at OFF state, impose a critical …

Lead-free bulk ceramics for advanced pulse power capacitors possess low recoverable
energy storage density (W rec) under low electric field. Sodium bismuth titanate (Bi 0.5 Na …

Gallium nitride on silicon (GaN/Si) is an important technological approach for power
electronic devices exhibiting superior performance compared to devices based on a pure …

AlGaN/GaN heterostructures were grown on Si (1 1 1) substrates with different AlN
nucleation layers (NL) by metal–organic chemical vapor deposition (MOCVD). The results …

GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high
density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and …