The rapid progress of the internet of things, cloud computing, and artificial intelligence has
increased demand for high-performance computing. This demand has led to a focused …

The influence of biaxial stress on the maximum and remanent polarizations of 10 nm thick
hafnium zirconium oxide thin films in metal–ferroelectric–metal capacitor structures has …

The increasing demand of information and communication technology has pushed
conventional computing paradigm to its limit. In addition, physical and technological factors …

The effect of the “waking” and subsequent “poling” operations on the electron barriers at
both top and bottom electrode interfaces in operating ferroelectric hafnium zirconium oxide …

A new material descriptor to predict the work function of the high-k gate material of a
junctionless transistor. This descriptor model is focused on vectorizing property metrics and …