Light-emitting diodes based on halide perovskites have undergone rapid development in
recent years and can now offer external quantum efficiencies of over 23%. However, the …

Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

Advances in renewable and sustainable energy technologies critically depend on our ability
to design and realize materials with optimal properties. Materials discovery and design …

Multicarrier dynamics play an essential role in quantum dot photophysics and
photochemistry, and they are primarily governed by nonradiative Auger processes. Auger …

Micro-displays based on an array of micro-sized light emitting diodes (µLEDs) are a
promising technology for a wide range of applications. In these 2-dimensional arrays, each …

GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

The developments of high performance InGaN based micro-light-emitting diodes (μLEDs)
are discussed. We first review the early demonstrations of μLEDs and the state-of-the-art …

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the
incorporation of superlattice structure, atomic layer deposition passivation, and a distributed …

Abstract 2D monolayer transition metal dichalcogenides (TMDCs) show great promise for
the development of next‐generation light‐emitting devices owing to their unique electronic …

This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …