MOVPE growth and characterization of GaAs/GaAsBi/GaAs pin structure
In this work, we report on the epitaxial growth and characterization of the
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
High‐Field Electron‐Drift Velocity in n‐Type Modulation‐Doped GaAs0.96Bi0.04 Quantum Well Structure
The drift velocity (vdrift) of electrons in an n‐type modulation‐doped GaAs0. 96Bi0. 04/Al0.
15Ga0. 85As quantum well (QW) structure is determined for electric fields (F) ranging from≈ …
15Ga0. 85As quantum well (QW) structure is determined for electric fields (F) ranging from≈ …
Electron energy relaxation mechanism in n-type InxGa1-xAs1-yBiy alloys under electric and magnetic fields
We investigate the power loss per electron mechanism of hot electrons generated under
electric and magnetic fields in n-type In x Ga 1-x As 1-y Bi y epitaxial layers. Acoustic …
electric and magnetic fields in n-type In x Ga 1-x As 1-y Bi y epitaxial layers. Acoustic …
Determination of electronic band structure of quaternary ferromagnetic Ga0. 97-yMn0. 03CryAs epitaxial layers
Introducing transition metals to conventional III-V semiconductors anomalously changes
their fundamental characteristics, such as electronic, magnetic, and structural properties. In …
their fundamental characteristics, such as electronic, magnetic, and structural properties. In …
Effect of thermal annealing on the optical and structural properties of (311) B and (001) GaAsBi/GaAs single quantum wells grown by MBE
The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …
Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures
We report on the power loss mechanisms of hot electrons in as-grown and annealed n-type
modulation-doped Al 0.15 Ga 0.85 As/GaAs 1-x Bi x (x= 0 and 0.04) quantum well structures …
modulation-doped Al 0.15 Ga 0.85 As/GaAs 1-x Bi x (x= 0 and 0.04) quantum well structures …
The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure
The band line-up and band offset calculations of GaAs 0.978 Bi 0.022/GaAs single quantum
well with spatial changes of Bi composition were reported. The spatial Bi profile and a …
well with spatial changes of Bi composition were reported. The spatial Bi profile and a …
Theoretical Study of Spontaneous Emission Spectra in GaAsBi/GaAs Quantum Wells
R Nie, DF Liu - Journal of Nanoelectronics and Optoelectronics, 2023 - ingentaconnect.com
GaAsBi/GaAs heterojunctions have a type II band arrangement, and the band structure
energy of GaAs alloys with diluted Bi content provides a wide range for designing effective …
energy of GaAs alloys with diluted Bi content provides a wide range for designing effective …
Optical dielectric function and electronic band structure of dilute GaAsBi-GaAs multiquantum wells by using variable angle spectroscopic ellipsometry
Objectives This letter reports about the electronic band structure of dilute GaAsBi-GaAs
quantum wells (QWs) experimentally studied by variable angle spectroscopic ellipsometry …
quantum wells (QWs) experimentally studied by variable angle spectroscopic ellipsometry …
[PDF][PDF] Optical characterization of Ga0. 965Mn0. 03Cr0. 005As thin film grown by molecular beam epitaxy
In this study, optical properties of Chrome (Cr) and Manganese (Mn) containing GaMnCrAs
epilayer are investigated using temperature dependent photoconductivity (PC) technique …
epilayer are investigated using temperature dependent photoconductivity (PC) technique …