The group-IV monochalcogenides SnS, SnSe, GeS, and GeSe form a family within the wider
group of semiconductor “phosphorene analogues.” Here, we used first-principles …

Germanium selenide (GeSe), a new 2D semiconductor material, is an attractive material due
to its excellent optoelectronic properties, which hold tremendous promise in a wide range of …

Volume 2 of this series concentrates on the use of synchrotron radiation which covers that
region of the electromagnetic spectrum which extends from about 10eV to 3keV in photon …

The van der Waals material GeSe is a potential solar absorber, but its optoelectronic
properties are not yet fully understood. Here, through a combined theoretical and …

The electroreflectance and absorption spectra as well as the hydrostatic pressure
dependence of the fundamental absorption edge of GeS, GeSe, SnS, and SnSe crystals are …

Tin monosulfide (SnS) is considered a promising earth-abundant absorber material for thin
film solar cells (TFSCs) with a theoretical power conversion efficiency (PCE) as high as 30 …

Photoelectron partial-yield and constant-initial-state (CIS) spectra of the layered-
semiconductor GeS, GeSe, SnS 0.9 Se 0.1, and SnSe single crystals were investigated with …

We have performed an ab initio calculation of the germanium selenide electronic structure,
adopting the LDA and GGA approximations for the exchange–correlation potential within the …

SnS and SnSe are renowned energy materials that are applied for photoelectric and
thermoelectric conversions owing to their suitable band gap, close to 1 eV, and superior …

In this study, near-infrared (NIR) x-polarized (P-state) light is created from the transmission
ray of monoclinic multilayer GaTe near the band edge. The P-state transmittance photons …