[PDF][PDF] Overview about technology perspectives for high efficiency solar cells for space and terrestrial applications
AW Bett, SP Philipps, S Essig… - 28th European …, 2013 - researchgate.net
III-V multi-junction solar cells have become standard in space and in terrestrial concentrator
systems. The current landmark for III-V multi-junction solar cells is the Ga0. 50In0. 50P/Ga0 …
systems. The current landmark for III-V multi-junction solar cells is the Ga0. 50In0. 50P/Ga0 …
Mixed semiconductor alloys for optical devices
There is an increasing technological need for a wider array of semiconducting materials that
will allow greater control over the physical and electronic structure within multilayer …
will allow greater control over the physical and electronic structure within multilayer …
[图书][B] МОС-гидридная эпитаксия в технологии материалов фотоники и электроники
Р Акчурин, А Мармалюк - 2022 - books.google.com
В книге рассмотрены теоретические и практические аспекты МОС-гидридной
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …
Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
Heterojunction solar cell structures employing InGaAsSbN (Eg∼ 1 eV) base regions are
grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room …
grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room …
Properties of 'bulk'GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration
GaAsSbN epitaxial films on GaAs substrate grown by metalorganic vapor phase epitaxy
(MOVPE) were investigated for integration into multi-junction solar cells. These films are …
(MOVPE) were investigated for integration into multi-junction solar cells. These films are …
InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition
Abstract InGaAsNSb/Ge (1.14/0.67 eV) double-junction solar cells have been grown by
metalorganic chemical vapor deposition (MOCVD). Ge p–n junction structures are realized …
metalorganic chemical vapor deposition (MOCVD). Ge p–n junction structures are realized …
Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy
Two different thermal annealing techniques (rapid thermal annealing (RTA) and in-situ post-
growth annealing in the metalorganic vapor phase epitaxy (MOVPE) chamber) were …
growth annealing in the metalorganic vapor phase epitaxy (MOVPE) chamber) were …
III–V multi-junction solar cells
SP Philipps, AW Bett - 2014 - books.rsc.org
The highest efficiencies of any photovoltaic technology, so far, have been reached with solar
cells made of III–V compound semiconductors. These compound semiconductors consist of …
cells made of III–V compound semiconductors. These compound semiconductors consist of …
1.25-eV GaAsSbN/Ge double-junction solar cell grown by metalorganic vapor phase epitaxy for high efficiency multijunction solar cell application
Dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE)
with bandgap energies of 1.25 eV have been integrated into solar cell structures employing …
with bandgap energies of 1.25 eV have been integrated into solar cell structures employing …
[HTML][HTML] Single junction solar cell employing strain compensated GaAs0. 965Bi0. 035/GaAs0. 75P0. 25 multiple quantum wells grown by metal organic vapor phase …
Single junction solar cells employing 30-period and 50-period GaAs 0.965 Bi 0.035/GaAs
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …