In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …

It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …

The availability of hydrogen energy from water splitting through the electrocatalytic route is
strongly dependent on the efficiency, durability, and cost of the electrocatalysts. Herein, a …

Perovskite type rare earth manganates RMnO 3 (LaMnO 3, NdMnO 3, SmMnO 3, and
EuMnO 3) nanofibers were fabricated by a simple electrospinning process. LaMnO 3 …

The letter reports that the impedance spectroscopy method has been performed to acquire
impeccable results on the ac electric conductivity (σ ac), dielectric (ε′ and ε′′) and …

To determine which of graphene (Gr) doping ratio (pure, 3–5%) into PVA is better or not, Gr-
based PVA organic thin film were grown between Al/p-Si by using electro-spinning …

We demonstrate the impact of rare-earth Nd 2 O 3 interlayer on the electrical properties of
Au/n-GaN Schottky junction (SJ), the Au/Nd 2 O 3/n-type GaN metal/interlayer …

This paper demonstrates the role of high-k La 2 O 3 on the electrical performance of the Au/n-
GaN Schottky junction (SJ) as an insulating layer between the Au and n-GaN films. First, the …

The present study aims to investigate the effect of (PVP: Sn-TeO 2) interfacial layer on the
electrical parameters of the Al/p-Si diode. For this aim,(Sn-TeO 2) nanostructures were …

In this study, frequency-dependent physical parameters, voltage-dependent of surface
traps/states, and their lifetime of the Au/(ZnCdS-GO: PVP)/n-Si (MPS) type structures were …