Structure, energetics, and electronic states of III–V compound polytypes
F Bechstedt, A Belabbes - Journal of Physics: Condensed Matter, 2013 - iopscience.iop.org
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …
[图书][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Direct band gap wurtzite gallium phosphide nanowires
The main challenge for light-emitting diodes is to increase the efficiency in the green part of
the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an …
the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an …
[HTML][HTML] Visible-range multiple-channel metal-shell rod-shaped narrowband plasmonic metamaterial absorber for refractive index and temperature sensing
Multiple resonance modes in an optical absorber are necessary for nanophotonic devices
and encounter a challenge in the visible range. This article designs a multiple-channel …
and encounter a challenge in the visible range. This article designs a multiple-channel …
Electronic bands of III-V semiconductor polytypes and their alignment
The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb,
InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction …
InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction …
Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade
Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is
still plagued by defect response, and there is a large discrepancy between measured and …
still plagued by defect response, and there is a large discrepancy between measured and …
Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy
In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables
the engineering of the electronic structure within a single material. This presupposes an …
the engineering of the electronic structure within a single material. This presupposes an …
[HTML][HTML] Stabilization of point-defect spin qubits by quantum wells
Defect-based quantum systems in wide bandgap semiconductors are strong candidates for
scalable quantum-information technologies. However, these systems are often complicated …
scalable quantum-information technologies. However, these systems are often complicated …
[HTML][HTML] Indium antimonide nanowires: synthesis and properties
This article summarizes some of the critical features of pure indium antimonide nanowires
(InSb NWs) growth and their potential applications in the industry. In the first section …
(InSb NWs) growth and their potential applications in the industry. In the first section …
First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors
We employ first-principles techniques tailored to properly describe semiconductors
(semilocal exchange potential added to the exchange-correlation functional), to obtain the …
(semilocal exchange potential added to the exchange-correlation functional), to obtain the …