Structure, energetics, and electronic states of III–V compound polytypes

F Bechstedt, A Belabbes - Journal of Physics: Condensed Matter, 2013 - iopscience.iop.org
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …

[图书][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Direct band gap wurtzite gallium phosphide nanowires

S Assali, I Zardo, S Plissard, D Kriegner… - Nano …, 2013 - ACS Publications
The main challenge for light-emitting diodes is to increase the efficiency in the green part of
the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an …

[HTML][HTML] Visible-range multiple-channel metal-shell rod-shaped narrowband plasmonic metamaterial absorber for refractive index and temperature sensing

CTC Chao, MRR Kooh, CM Lim, R Thotagamuge… - Micromachines, 2023 - mdpi.com
Multiple resonance modes in an optical absorber are necessary for nanophotonic devices
and encounter a challenge in the visible range. This article designs a multiple-channel …

Electronic bands of III-V semiconductor polytypes and their alignment

A Belabbes, C Panse, J Furthmüller, F Bechstedt - Physical Review B …, 2012 - APS
The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb,
InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction …

Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade

E Memisevic, M Hellenbrand, E Lind, AR Persson… - Nano …, 2017 - ACS Publications
Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is
still plagued by defect response, and there is a large discrepancy between measured and …

Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy

B Ketterer, M Heiss, E Uccelli, J Arbiol… - ACS …, 2011 - ACS Publications
In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables
the engineering of the electronic structure within a single material. This presupposes an …

[HTML][HTML] Stabilization of point-defect spin qubits by quantum wells

V Ivády, J Davidsson, N Delegan, AL Falk… - Nature …, 2019 - nature.com
Defect-based quantum systems in wide bandgap semiconductors are strong candidates for
scalable quantum-information technologies. However, these systems are often complicated …

[HTML][HTML] Indium antimonide nanowires: synthesis and properties

M Shafa, S Akbar, L Gao, M Fakhar-e-Alam… - Nanoscale research …, 2016 - Springer
This article summarizes some of the critical features of pure indium antimonide nanowires
(InSb NWs) growth and their potential applications in the industry. In the first section …

First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors

M Gmitra, J Fabian - Physical Review B, 2016 - APS
We employ first-principles techniques tailored to properly describe semiconductors
(semilocal exchange potential added to the exchange-correlation functional), to obtain the …