Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

R Taco, I Levi, M Lanuzza, A Fish - Solid-State Electronics, 2016 - Elsevier
In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for
low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully …

Impact of back gate bias on analog performance of dopingless transistor

R Kumar, M Panchore - Transactions on Electrical and Electronic Materials, 2023 - Springer
In this brief, the impact of back gate bias (V gb), on analog performance of silicon on
insulator dopingless transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are …

An SOI photodetector with field-induced embedded diode showing high responsivity and tunable response spectrum by backgate

XY Cao, WS Lin, HB Liu, JN Deng… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, we demonstrate experimentally a photodetector based on silicon-on-insulator
substrate. The photosensing diode is formed in the substrate induced by the backgate bias …

1T pixel sensor based on FDSOI transistor optical back biasing

L Kadura, L Grenouillet, O Rozeau… - … on Electron Devices, 2019 - ieeexplore.ieee.org
This paper presents the study of a monolithically integrated FDSOI-based pixel sensor,
called FDPix. The FDPix consists in cointegrating a photodiode in the substrate of an fully …

Deep-depletion effect in SOI substrates and its application in photodetectors with tunable responsivity and detection range

M Arsalan, J Liu, A Zaslavsky… - … on Electron Devices, 2020 - ieeexplore.ieee.org
We present an interesting transient effect found in silicon-on-insulator (SOI) transistors,
where the drain current responds slowly to a back-gate voltage (V BG) pulse. This transient …

Photosensitivity Performance of a Gate-Oxide-Stack Intended Source FDSOI Based 1T Pixel Sensor

N Rao, VK Mishra - IEEE Sensors Journal, 2023 - ieeexplore.ieee.org
In this article, we investigate a novel intended source one transistor pixel sensor (IS 1T
PIXEL SENSOR) at 22-nm gate technology. The proposed pixel sensor is demonstrated with …

Extended exploration of low granularity back biasing control in 28nm UTBB FD-SOI technology

R Taco, I Levi, M Lanuzza, A Fish - 2016 IEEE International …, 2016 - ieeexplore.ieee.org
Recently, we proposed a low-granularity back-bias control technique [1] optimized for the
ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The …

Pushing minimum energy limits by optimal asymmetrical back plane biasing in 28 nm UTBB FD-SOI

F Veirano, L Naviner, F Silveira - 2016 26th International …, 2016 - ieeexplore.ieee.org
In this work we propose an optimal back plane biasing (OBB) scheme to be used in a UTBB
FD SOI technology that minimizes the energy per operation consumption of sub threshold …

[图书][B] On-Chip Current Sensors for Reliable, Secure, and Low-Power Integrated Circuits

RP Bastos, FS Torres - 2020 - Springer
Many types of new-generation electronics systems surround nowadays our lives, providing
solutions, utilities, and conveniences we had never experimented before. Biomedical …

FD-SOI technology opportunities for more energy efficient asynchronous circuits

TF de Paiva Leite - 2019 - theses.hal.science
Keeping the fast evolving pace of embedded systems of portable devices require
ameliorations of power management techniques, without compromising the circuit …