In this paper, an analytical model for center potential and threshold voltage is developed for
a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by …

Background: As the size of the field effect transistors is reduced down to nanometers, the
performance of the devices is affected by various short-channel effects. To overcome these …

This research covers the evaluation of gate all-around nanowire FETs (GAA-NW FETs) for
different materials ie. Germanium and Silicon. GAA-NW FETs with different channel …

The field of integrated circuits (ICs) has come a long way in the last several decades. The
scaling of complementary metal-oxide-semiconductor (CMOS) transistors has enabled …

Integrated circuits have undergone significant development over the past several decades.
Because of the increased density of transistors in CMOS devices, faster, more efficient, and …

Low-power electronics utilize the least amount of energy possible to perform their intended
function. Power management, energy-efficient design, and alternative energy sources help …

Low-power electronics utilize the least amount of energy possible to perform their intended
function. Power management, energy-efficient design, and alternative energy sources help …

This work offers analysis and simulation of various characteristics of Tunnel FET Compact
Model. Here we analyze the electrical characteristics particularly Drain current (I_d) for …

This paper gives analysis and simulation of performance of different gates present in Multi-
gate Nanowire FET (MG-NWFETs) such as, tri, pi, double, omega and gate all around …

Future high-speed and low-power systems may benefit from CMOS and tunneling-FETs
(TFETs) having good mobility III-V networks. Due to the lack of scaling issues, a TFET can …