Properties of the ferromagnetic III–V semiconductor (Ga, Mn) As and heterostructures based
on it are reviewed. A model based on hole-mediated ferromagnetic interaction is shown to …

III–V ferromagnetic semiconductors allow epitaxial integration of ferromagnetism with
nonmagnetic semiconductor heterostructures and offer opportunities to explore properties …

The structural properties of twin-plane superlattices in InP nanowires are systematically
analyzed. First, we employ molecular dynamics simulations to determine the strain fields in …

We discuss different aspects of the optical properties in a single CdTe spherical quantum dot
after performing a systematic study of the eigenvalues, wave functions, and their dominant …

This work studies the impact of the nonparabolicity on the formation of multisubband
plasmons. We explore three semiclassical optical response models and compare their …

We have studied the tunneling magnetoresistance (TMR) of Ga 0.94 Mn 0.06 As∕ Al As (d
nm)∕ In 0.4 Ga 0.6 As (0.42 nm)∕ Al As (d nm)∕ Ga 0.94 Mn 0.06 As double-barrier …

The unique interplay between semiconducting bulk properties and ferromagnetism via
exchange interaction, first discovered in europium chalcogenides (eg EuO) and …

This work is concerned with transparent boundary conditions (TBCs) for systems of
Schrödinger-type equations, namely the time-dependent kp-Schrödinger equations. These …

Optimum bound-to-continuum normal-incidence absorption in low-doped (less than 1× 10
12 cm− 2) p-type GaAs/AlGaAs quantum wells obtains for well widths for which the second …

We have studied spin carrier dynamics under full spin-orbit coupling. The anisotropy of
dispersions for independent circular spinor polarizations is explored as a possible vertical …