Review on the reliability mechanisms of SiC power MOSFETs: A comparison between planar-gate and trench-gate structures
J Wei, Z Wei, H Fu, J Cao, T Wu, J Sun… - … on Power Electronics, 2023 - ieeexplore.ieee.org
To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …
Investigations on the degradations of double-trench SiC power MOSFETs under repetitive avalanche stress
J Wei, S Liu, L Yang, L Tang, R Lou, T Li… - … on electron devices, 2018 - ieeexplore.ieee.org
The degradations of electrical parameters for double-trench silicon carbide (SiC) power
metal-oxidesemiconductor field-effect transistors (MOSFETs) under repetitive avalanche …
metal-oxidesemiconductor field-effect transistors (MOSFETs) under repetitive avalanche …
Comprehensive analysis of electrical parameters degradations for SiC power MOSFETs under repetitive short-circuit stress
J Wei, S Liu, L Yang, J Fang, T Li, S Li… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The degradations of electrical parameters for silicon carbide power MOSFETs under
repetitive short-circuit (SC) stress are investigated in detail in this paper. It demonstrates that …
repetitive short-circuit (SC) stress are investigated in detail in this paper. It demonstrates that …
Review of methodologies for evaluating short-circuit robustness and reliability of SiC power MOSFETs
To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
Investigation on the degradation mechanism for SiC power MOSFETs under repetitive switching stress
J Wei, S Liu, R Lou, L Tang, R Ye… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
The degradation of electrical parameters for SiC power metal-oxide-semiconductor field-
effect transistors (MOSFETs) under repetitive switching stress is investigated in detail. The …
effect transistors (MOSFETs) under repetitive switching stress is investigated in detail. The …
[HTML][HTML] Degeneration mechanism of 30áMeV and 100áMeV proton irradiation effects on 1.2 ákV SiC MOSFETs
JH Seo, YJ Kim, IH Kang, JH Moon, YM Kim… - Radiation Physics and …, 2025 - Elsevier
In this study, we evaluated and characterized the effects of various proton irradiation
energies and fluences on the electrical characteristics of SiC MOSFETs using a proton …
energies and fluences on the electrical characteristics of SiC MOSFETs using a proton …
[HTML][HTML] Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs
M He, P Dong, Y Ma, Q Yu, S Cao, W Huang, Q Xu… - Results in Physics, 2024 - Elsevier
In this work, the electron irradiation effects and post-irradiation annealing (PIA) response on
SiC MOSFETs were investigated and analyzed in terms of the evolution of oxide-and …
SiC MOSFETs were investigated and analyzed in terms of the evolution of oxide-and …
Investigation of a new power junctionless MOSFET using 2-D numerical simulation
B Zerroumda, F Djeffal, S Benaggoune… - … Multi-Conference on …, 2022 - ieeexplore.ieee.org
Despite the widespread use of power MOSFETs in numerous applications, their channel
mobility has been a serious issue hindering the improvement of electrical performances. In …
mobility has been a serious issue hindering the improvement of electrical performances. In …