Three-dimensional integrated circuit design

Y Xie, J Cong, S Sapatnekar - EDA, Design and Microarchitectures, New …, 2010 - Springer
To the observer, it would appear that New York city has a special place in the hearts of
integrated circuit (IC) designers. Manhattan geometries, which mimic the blocks and streets …

TSV stress aware timing analysis with applications to 3D-IC layout optimization

J Yang, K Athikulwongse, YJ Lee, SK Lim… - Proceedings of the 47th …, 2010 - dl.acm.org
As the geometry shrinking faces severe limitations, 3D wafer stacking with through silicon
via (TSV) has gained interest for future SOC integration. Since TSV fill material and silicon …

Yield enhancement for 3D-stacked ICs: Recent advances and challenges

Q Xu, L Jiang, H Li, B Eklow - 17th Asia and South Pacific …, 2012 - ieeexplore.ieee.org
Three-dimensional (3D) integrated circuits (ICs) that stack multiple dies vertically using
through-silicon vias (TSVs) have gained wide interests of the semiconductor industry. The …

Low-power and reliable clock network design for through-silicon via (TSV) based 3D ICs

X Zhao, J Minz, SK Lim - IEEE Transactions on Components …, 2010 - ieeexplore.ieee.org
This paper focuses on low-power and low-slew clock network design and analysis for
through-silicon via (TSV) based three-dimensional stacked ICs (3D ICs). First, we investigate …

Test-architecture optimization and test scheduling for TSV-based 3-D stacked ICs

B Noia, K Chakrabarty, SK Goel… - … on Computer-Aided …, 2011 - ieeexplore.ieee.org
Through-silicon via (TSV)-based 3-D stacked ICs (SICs) are becoming increasingly
important in the semiconductor industry. In this paper, we address test architecture …

Cost-effective integration of three-dimensional (3D) ICs emphasizing testing cost analysis

Y Chen, D Niu, Y Xie… - 2010 IEEE/ACM …, 2010 - ieeexplore.ieee.org
Three-dimensional (3D) ICs promise to overcome barriers in interconnect scaling by
leveraging fast, dense inter-die vias, thereby offering benefits of improved performance …

TSV defects and TSV-induced circuit failures: The third dimension in test and design-for-test

K Chakrabarty, S Deutsch… - 2012 IEEE International …, 2012 - ieeexplore.ieee.org
3D integrated circuits (3D ICs) based on through-silicon vias (TSVs) have emerged as a
promising solution for overcoming interconnect and power bottlenecks in IC design …

TSV-based 3-D ICs: Design methods and tools

T Lu, C Serafy, Z Yang, SK Samal… - … on Computer-Aided …, 2017 - ieeexplore.ieee.org
Vertically integrated circuits (3-D ICs) may revitalize Moore's law scaling which has slowed
down in recent years. 3-D stacking is an emerging technology that stacks multiple dies …

Pre-bond and post-bond test and signal recovery structure to characterize and repair TSV defect induced signal degradation in 3-D system

M Cho, C Liu, DH Kim, SK Lim… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
In this paper, we present a methodology for characterization and repair of signal
degradation in through-silicon-vias (TSVs) in 3-D integrated circuits (ICs). The proposed …

Design method and test structure to characterize and repair TSV defect induced signal degradation in 3D system

M Cho, C Liu, DH Kim, SK Lim… - 2010 IEEE/ACM …, 2010 - ieeexplore.ieee.org
In this paper we present a test structure and design methodology for testing,
characterization, and self-repair of TSVs in 3D ICs. The proposed structure can detect the …