Anomalous atomic fluctuations in the local structure around Mn of thin films

H Kizaki, K Hayashi, C Lu, N Happo, S Hosokawa… - Physical Review B, 2022 - APS
Local atomic structures around Mn in (Zn, Sn, Mn) As 2 thin films grown on InP (001)
substrates were studied using x-ray fluorescence holography. The reconstructed three …

MBE growth of Mn-doped ZnSnAs2 thin films

JT Asubar, Y Jinbo, N Uchitomi - Journal of crystal growth, 2009 - Elsevier
ZnSnAs2 thin film doped with∼ 4% Mn was grown on (001) InP substrates by all elemental
solid source molecular beam epitaxy using the previously determined optimum substrate …

First-principles study of electronic and magnetic properties in site dependent Fe-doped chalcopyrite ZnSnAs2semiconductors: Comparison with those of Mn-and Cr …

N Uchitomi, H Kizaki - Journal of Magnetism and Magnetic Materials, 2024 - Elsevier
The electronic and magnetic properties of Fe-doped ZnSnAs 2 within chalcopyrite structures
have been studied by first-principles calculations using the density functional theory (DFT) …

Theoretical investigations on elastic, thermal and lattice dynamic properties of chalcopyrite ZnSnX2 (X = P, As, Sb) under pressure and temperature: The first …

H Liu, B Zhao, Y Yu, Z He, J Xiao, W Huang… - … Journal of Modern …, 2018 - World Scientific
We performed the first-principles calculations on the elastic and thermal properties for
chalcopyrite ZnSnX2 (X= P, As, Sb), employing the ultrasoft pseudo-potentials and …

Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

N Uchitomi, S Hidaka, S Saito, JT Asubar… - Journal of Applied …, 2018 - pubs.aip.org
The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-
doped ZnSnAs 2 ferromagnetic semiconductors, epitaxially grown on InP substrates by …

Effect of thermal annealing on the properties of narrow-bandgap ZnSnAs2 epitaxial films on InP (001) substrates

Y Agatsuma, JT Asubar, Y Jinbo, N Uchitomi - Physics Procedia, 2010 - Elsevier
ZnSnAs2 epitaxial film has been grown on epi-ready semi-insulating InP (001) substrates by
low-temperature molecular beam epitaxy (LT-MBE) technique. The MBE-grown sample was …

High-resolution X-ray diffraction studies of ZnSnAs2 epitaxial films nearly lattice-matched to InP substrates

JT Asubar, Y Agatsuma, H Yamaguchi, SI Nakamura… - Physics Procedia, 2010 - Elsevier
ZnSnAs2 epitaxial films were grown by molecular beam epitaxy (MBE) on nearly lattice
matched InP substrates. Four samples namely samples A, B, C, and D were prepared at …

Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2 Epitaxial Film on InP Substrates

H Oomae, JT Asubar, Y Jinbo… - Japanese Journal of …, 2011 - iopscience.iop.org
We present for the first time the temperature dependence of resistivity, anomalous Hall
effect, and extraordinary magnetoresistance (MR) in 6.5% Mn-doped ZnSnAs 2 epitaxial film …

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs2 thin films

JT Asubar, Y Jinbo, N Uchitomi - physica status solidi c, 2009 - Wiley Online Library
The previously reported transport properties data of the undoped ZnSnAs2 grown on semi‐
insulating InP substrates by molecular beam epitaxy (MBE) have been reviewed and …

Ferromagnetic ZnSnAs2: Mn Chalcopyrite Semiconductors for InP-based Spintronics

N Uchitomi, JT Asubar, H Oomae, H Endoh… - e-Journal of Surface …, 2011 - jstage.jst.go.jp
Since the ferromagnetism in ternary chalcopyrite semiconductor CdGeP2: Mn was first
reported by Medvedkin et al., several ferromagnetic ternary compounds such as II-IV-P2 and …