This review offers an illuminating journey through the historical evolution and modern‐day
applications of liquid metals, presenting a comprehensive view of their significance in …

Radiation tolerance is determined as the ability of crystalline materials to withstand the
accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences …

Abstract β-Ga 2 O 3, known as a next-generation wide-bandgap transparent semiconducting
oxide (TSO), has considerable application potential in ultra-high-power and high …

Abstract Gallium oxide (Ga 2 O 3) and gallium nitride (GaN) are fourth-and third-generation
semiconductor materials, respectively. Their heterogeneous structure (lattice mismatch of …

β-Ga_2O_3 as an ultra-wide bandgap material is widely used in space missions and
nuclear reactor environments. It is well established that the physical properties of β …

Recently reported remarkably high radiation tolerance of γ/β-Ga 2 O 3 double-polymorphic
structure brings this ultrawide-band-gap semiconductor to the frontiers of power electronics …

Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated
by favorable atomic rearrangements, may temporarily help to maintain long-range …

The lattice thermal conductivity (LTC) of Ga2O3 is an important property due to the
challenge in the thermal management of high-power devices. In this work, we develop …

β-Ga 2 O 3 has been subjected to intense research interest as an ultrawide bandgap
semiconductor. The epitaxial growth technique of β-Ga 2 O 3 thin films plays a fundamental …

We present for the first time a multiscale machine learning approach to jointly simulate
atomic structure and dynamics with the corresponding solid state Nuclear Magnetic …