Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

Surfaces and interfaces of hydrogen-terminated diamonds are reviewed. The control and
preparation of diamond surfaces have been greatly advanced by the recent progress in …

Abstract Using nitrogen-dioxide (NO 2) adsorption treatment and Al 2 O 3 passivation
technique, we improved drain current (I DS) of hydrogen-terminated (H-terminated) diamond …

H. Kawarada, H. Tsuboi, T. Naruo, T. Yamada, D. Xu, A. Daicho, T. Saito, A. Hiraiwa; CH
surface diamond field effect transistors for high temperature (400 C) and high voltage (500 …

Diamond field-effect transistor (FET) has great application potential for high frequency and
high power electronic devices. In this work, diamond FETs were fabricated on (0 0 1) single …

This letter reports the small-signal and large-signal performances at high drain voltage (V
DS) ranging up to 60 V for a 0.5 μm gate length two-dimensional hole gas diamond metal …

Diamond is a unique material that often exhibits extreme properties compared to other
materials. Discovered about 30 years ago, the use of hydrogen in plasma-enhanced …

To date, the only dopant available for bulk diamond with good controllability is boron, which
acts as an acceptor and can be incorporated in relatively high concentrations, allowing the …

AC–Si bonded SiO 2/diamond interface is formed under a SiO 2 mask during the selective
diamond growth at a high temperature in a H 2 atmosphere including methane (5%). A few …