Modeling and analysis of magnetic field induced coupling on embedded STT-MRAM arrays
I Yoon, A Raychowdhury - IEEE Transactions on Computer …, 2017 - ieeexplore.ieee.org
Spin transfer torque magnetic random access memory (STT-MRAM) is an emerging memory
technology which exhibits nonvolatility, high density, high endurance, and nano-second …
technology which exhibits nonvolatility, high density, high endurance, and nano-second …
Self-referenced single-ended resistance monitoring write termination scheme for STT-RAM write energy reduction
S Choi, HK Ahn, B Song, SH Kang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Essential design requirements for a sense amplifier (SA) used in the resistance monitoring
write termination (RM-WT) scheme are suggested to reduce the write energy of spin-transfer …
write termination (RM-WT) scheme are suggested to reduce the write energy of spin-transfer …
CMOS Reliability Characterization Techniques and Spintronics-Based Mixed-Signal Circuits
WH Choi - 2015 - search.proquest.com
Abstract Plasma-Induced Damage (PID) has been an important reliability concern for
equipment vendors and fabs in both traditional SiO2 based and advanced high-k dielectric …
equipment vendors and fabs in both traditional SiO2 based and advanced high-k dielectric …