Analysis of current conduction mechanism in CZTSSe/n-Si structure
M Terlemezoglu, Ö Bayraklı, HH Güllü… - Journal of Materials …, 2018 - Springer
Abstract In this study, Cu 2 ZnSn (S, Se) 4 (CZTSSe) thin films were deposited by the single
step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass …
step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass …
Enhancement of optical absorption and dispersion characteristics of nanocrystalline In2Se3 films: impact of γ-ray irradiation
B Ebraheem, AAM Farag, AH Ashour… - Journal of Materials …, 2023 - Springer
Thermal evaporation was used to deposit In2Se3 thin films with a thickness of 276 nm on
different glass and quartz substrates under vacuum. The 60Co rays were used to irradiate …
different glass and quartz substrates under vacuum. The 60Co rays were used to irradiate …
Diode and photocurrent effect in ferroelectric BaTiO3− δ
The leakage current has been regarded as one of the major problems in ferroelectric
memories. However, recent studies on the unidirectional electric transport through a …
memories. However, recent studies on the unidirectional electric transport through a …
Device behavior of an In/p-Ag (Ga, In) Te2/n-Si/Ag heterojunction diode
E Coşkun, HH Güllü, İ Candan, Ö Bayraklı… - Materials Science in …, 2015 - Elsevier
In this work, p-(Ag–Ga–In–Te) polycrystalline thin films were deposited on soda-lime glass
and n-type Si substrates by e-beam evaporation of AgGa 0.5 In 0.5 Te 2 crystalline powder …
and n-type Si substrates by e-beam evaporation of AgGa 0.5 In 0.5 Te 2 crystalline powder …
p-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications
A p-ZnTe/n-CdMnTe/n-GaAs diode was grown by MBE technology. The current–voltage
characteristics of the grown device were analyzed under dark and illumination conditions …
characteristics of the grown device were analyzed under dark and illumination conditions …
Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode
In this study, polycrystalline thin films of ternary AgIn 5 Se 8 compounds with n-type
conductivity were deposited on p-type Si substrates from the powder of a Ag 3 In 5 Se 9 …
conductivity were deposited on p-type Si substrates from the powder of a Ag 3 In 5 Se 9 …
Electrical parameters of Al/InSe/C RF sensors
AF Qasrawi - Physica Scripta, 2014 - iopscience.iop.org
Abstract An Al/InSe/C Schottky device is designed on the surface of amorphous InSe thin
films. The device is observed to exhibit a switching property at particular biasing voltages …
films. The device is observed to exhibit a switching property at particular biasing voltages …
Structural and Optical Characteristics of γ‐In2Se3 Nanorods Grown on Si Substrates
MD Yang, CH Hu, SC Tong, JL Shen… - Journal of …, 2011 - Wiley Online Library
This study attempted to grow single‐phase γ‐In2Se3 nanorods on Si (111) substrates by
metal‐organic chemical vapor deposition (MOCVD). High‐resolution transmission electron …
metal‐organic chemical vapor deposition (MOCVD). High‐resolution transmission electron …
Device characterization of ZnInSe2 thin films
HH Güllü, M Parlak - Energy Procedia, 2016 - Elsevier
Abstract p-Si/n-ZnInSe 2 hetero-junction diode was deposited by thermal evaporation of
elemental evaporation sources on the 600 μm thick p-type (1 1 1) mono-crystalline Si wafers …
elemental evaporation sources on the 600 μm thick p-type (1 1 1) mono-crystalline Si wafers …
FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS
A HOSSEINI, HH GÜLLÜ, E Coskun… - Surface Review and …, 2019 - World Scientific
Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering
technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction …
technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction …