Connecting semiconductor switches in series is a way to increase the voltage rating of a
power electronic converter. However, if two switches are directly connected without any …

This paper presents a comprehensive survey of voltage balancing techniques for series-
connected SiC-MOSFETs. The concept of connecting power devices in series is appealing …

Series connection of multiple transistors is an attractive solution to achieve higher voltage
capability. However, the voltage imbalance among the series-connected devices is a critical …

Stacking devices in series allows to achieve higher blocking voltage in power applications.
However, an unequal voltage sharing issue among devices is critical which may lead to …

This work discusses a novel set of alternate implementations of isolated gate driver circuits
for power electronic transistors. The proposed topologies for the driver have been designed …

凭借碳化硅(SiC) 材料具有宽禁带, 高击穿电场, 高电子饱和速率和高导热性等优点, SiC
MOSFET 广泛应用在高压, 高频等大功率场合. 传统基于硅(Si) MOSFET 的驱动电路无法完全 …

The series connection of silicon carbide (SiC) MOSFETs and cascaded systems allows
operating at higher voltages than those specified of devices. However, there is an issue of …

This paper presents a comprehensive survey of voltage balancing techniques for series-
connected SiC-MOSFETs. The concept of connecting power devices in series is appealing …

The series-connected semiconductor devices structure is one way to achieve a high voltage
rating. However, a problem with voltage imbalance exists in which different voltages are …

This work investigates new gate drive power supply configurations and a novel multi-
steppackaging concept in order to improve the performance of series-connected SiC …