The status of rapid solidification is discussed in terms of recent progress in modelling
methods of achieving solidification at high cooling rates and its effects on alloy constitution …

Pulses of radiation from ruby and Nd: YAG Q-switched lasers have been used recently to
anneal the lattice damage caused by ion implantation of semiconductors. Other similar …

Laser Annealing of Semiconductors deals with the materials science of surfaces that have
been subjected to ultrafast heating by intense laser or electron beams. This book is …

The formation of supersaturated substitutional alloys by ion implantation and rapid liquid‐
phase‐epitaxial regrowth induced by pulsed laser annealing has been studied using …

The implantation of dopant atoms in semiconductors is in general associated with lattice
damage. The recovery of the crystal disorder is necessary to electrically activate the dopant …

In this revised and expanded edition, the authors provide a comprehensive overview of the
tools, technologies, and physical models needed to understand, build, and analyze …

The physical and electrical properties of ion-implanted silicon annealed with high-powered
laser radiation are described. Particular emphasis is placed on the comparison of materials …

The recent surge in the study of semiconductors laser annealing reflects the recognition of
the potential this method holds for fast damage removal from thin amorphous layers and for …

Highly nonequilibrium thermodynamic processes occur during the ultrarapid recrystallization
characteristic of pulsed laser annealing. Values of interface segregation coefficients are …

By solving the time-dependent heat flow equation, the temperature reached by silicon and
cadmium telluride surface layers under high power density ruby laser pulsed illumination, is …