Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

Nanowire-based devices can potentially be of use in a variety of electronic applications,
from ultrascaled digital circuits to 5G communication networks. However, the devices are …

With the continuous improvement of the power density and operating frequency in power
conversion systems, it is necessary to develop the new power electronic products with better …

In this letter, a device structure of high-resistivity-cap-layer HEMT (HRCL-HEMT) is
developed for normally-off p-GaN gate HEMT toward high breakdown voltage and low …

In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …

Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and
passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility …

Interface trapping is one of the most notorious effects that limit device performance in GaN-
based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a …

In this letter, we report an in-situ predeposition plasma nitridation process, which is adopted
to remove the GaN surface oxygen-related bonds and reduce surface dangling bonds by …

In this letter, we demonstrate a recessed-anode Schottky barrier diode (SBD) on a double
AlGaN/GaN heterojunction structure. A self-terminated, oxidation/wet etching with low …

Enhancement-mode (E-mode) GaN-based MIS-HEMTs still suffer from undeniable gate
leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in …